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    EMCORE CORP
Part No. 1612PE1PAD313 1612PE2PAD322
OCR Text ...nal sections of the data sheet. exposure to absolute maximum ratings for extended periods can adversely affect device reliability. parameter symbol condition min max units op erating case temperature t c continuous - 40...
Description FIBER OPTIC TRANSMITTER, 1300-1320nm, PANEL MOUNT, FC/APC CONNECTOR
FIBER OPTIC TRANSMITTER, 1300-1320nm, PANEL MOUNT, SC/APC CONNECTOR

File Size 244.98K  /  6 Page

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    OV5116N

OmniVision Technologies
List of Unclassifed Manufacturers
N.A.
ETC
Part No. OV5116N
OCR Text ...isplay device. The on-chip auto exposure allows for a wide range of lighting conditions, eliminating the need for external mechanical shutter components. This, along with its single supply, low power consumption makes the OV5116N an incredi...
Description OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT

File Size 153.99K  /  5 Page

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    LZ0P3620 LZ0P3621

Sharp Electrionic Components
Part No. LZ0P3620 LZ0P3621
OCR Text ...form illumination. The standard exposure conditions are defined as when VO is 150 mV. 2. The average output voltage in the central area (H/10, V/10) under 10 times exposure of the standard exposure conditions. 3. The average output voltage ...
Description 1/4-type Built-in Lens Color CCD Area Sensors with 320 k Pixels

File Size 113.45K  /  14 Page

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    HSC-AT11CS-A01 HSC-AT11CS-A02 HSC-AT11CS-A03 HSC-AT11CS-A04 HSC-AT11CS-A05 HSC-AT11CS-A06 HSC-AT11CS-A07 HSC-AT11CS-A08

HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
Part No. HSC-AT11CS-A01 HSC-AT11CS-A02 HSC-AT11CS-A03 HSC-AT11CS-A04 HSC-AT11CS-A05 HSC-AT11CS-A06 HSC-AT11CS-A07 HSC-AT11CS-A08 HSC-AT11CS-A09 HSC-AT11CS-A10 HSC-AT11CS-A11 HSC-AT11CS-A12 HSC-AT11CS-A13 HSC-AT11CS-A14 HSC-AT11CS-A15 HSC-AT11CS-A16 HSC-AT11CS-A20 HSC-AT11CS-A25 HSC-AT11CS-A30
OCR Text ... of cycles : 21 Low-Temperature exposure and Thermal Shock Temperature : 23c 40c -40c 23c Duration : 2.1h 72 h 5 min. minimum High-Temperture exposure and Thermal Shock Temperature : 23c 70c 70c 23c Duration : 1.6h 72 h 5 min. minimum...
Description SC-Type Optical Fixed Attenuators 资深大律师型光固定衰减器
RES 5000M OHM THICK FILM 2.5W 1%

File Size 161.62K  /  2 Page

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    NX5521EH NX5521EK

Renesas Electronics Corporation
Part No. NX5521EH NX5521EK
OCR Text ...le laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warn...
Description LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

File Size 181.60K  /  8 Page

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    C7557

Hamamatsu Photonics
Hamamatsu Corporation
Part No. C7557
OCR Text ...ctions Parameter Data transfer exposure time setting External sync signal input Trigger mode Trigger polarity Shutter timing pulse output Video signal output Video sync signal output Amplifier gain Detector head Number of detector channels...
Description Multichannel detector head controller

File Size 335.56K  /  6 Page

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    JANSR2N7261U IRHE3130 IRHE7130 JANSH2N7261U IRHE4130 IRHE8130 JANSF2N7261U JANSG2N7261U

IRF[International Rectifier]
International Rectifier, Corp.
Part No. JANSR2N7261U IRHE3130 IRHE7130 JANSH2N7261U IRHE4130 IRHE8130 JANSF2N7261U JANSG2N7261U
OCR Text ...State Resistance Vs. Total Dose exposure Voltage Vs. Total Dose exposure Fig 3. Typical Response of Transconductance Vs. Total Dose exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose exposure 4 www.irf....
Description    RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18) 抗辐射功率MOSFET SURFCACE贴装(持有LCC - 18

File Size 435.59K  /  12 Page

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    JANSR2N7261 IRHF7130

International Rectifier
Part No. JANSR2N7261 IRHF7130
OCR Text ...State Resistance Vs. Total Dose exposure Voltage Vs. Total Dose exposure Fig 3. Typical Response of Transconductance Vs. Total Dose exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose exposure 4 www.irf....
Description RADIATION HARDENED POWER MOSFET

File Size 437.49K  /  12 Page

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    S3901-1024Q S3901-2048Q S3904-2048Q S3904-1024Q

Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
Part No. S3901-1024Q S3901-2048Q S3904-2048Q S3904-1024Q
OCR Text ...apacitance *4 Cph 20 Saturation exposure *4, *5 Esat 180 Saturation output charge *4 Qsat 50 Photo response non-uniformity *6 PRNU *4: Vb=2.0 V, V=5.0 V *5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pi...
Description NMOS Linear image sensor NMOS管线性图像传感器
(S3901-1024Q / S3904-2048Q) NMOS Linear Image Sensor

File Size 119.00K  /  4 Page

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