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604ANZ 7010156 UMB10FU ZMM11LB2 ZMM11LB2 14204 JF15CP4H 2SA965O
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    BA3131FS BA3131

Rohm CO.,LTD.
ROHM[Rohm]
Part No. BA3131FS BA3131
OCR Text ...d ICs !Measurement conditions (figure 1) Measurement Item Input offset voltage Input offset current Input bias current VCC 8 8 8 VR Vref Vref Vref EK -- -- -- 5.5 2.5 8 0 -- -- VF VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 S1...
Description Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2)
ER 14C 14#16 PIN PLUG
Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 1 output 2)
Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2)
Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer

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    PWA2405D-10W

MORNSUN Science& Technology Ltd.
Part No. PWA2405D-10W
OCR Text ...47pf/2kv -- -- note: 1. in figure 1,part is ems recommended external circuit, part is emi recommended external circuit. choose according to requirements. 2. if there is no recommended parameters, the model no require the external...
Description DUAL/SINGLE OUTPUT DC-DC CONVERTER

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    BAT54RCLT1

ZOWIE[Zowie Technology Corporation]
Part No. BAT54RCLT1
OCR Text ...gy Corporation BAT54RCLT1 figure 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT 820 +10 V 2k 100uH 0.1uF D.U.T. OUTPUT PULSE GENERATOR 50 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1mA OUTPUT PULSE (I F = I R = 10 mA; m...
Description SCHOTTKY BARRIER DIODE

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    ST Microelectronics
Part No. P011XX
OCR Text .... s = copper surface under tab. figure 1. maximum average power dissipation versus average on-state current figure 2. average and dc on-state current versus lead temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0....
Description Sensitive Gate SCRs

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...S * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordles...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...S * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ...e Inductive Load at 64 KHz (see figure 2) 3/7 BUH1215 Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... IC - Collector Current - A figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 R3636CFB MAXIMUM REVERSE-BIAS SAFE OPERATING AREA 3 R3636CRB TC = 25C IB(on) = IC / 10 VBE(off) = -5...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

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    BUX41 ON0260

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BUX41 ON0260
OCR Text ...0.6 0.8 1.0 Rating 0 40 v figure 1. Power Derating 80 120 TC, TEMPERATURE (C) VCEO(sus) Symbol Symbol TJ, Tstg VCBO VCER VEBO VCEX IC ICM JC PD IB 160 - 65 to 200 Value 1.46 Max ...
Description 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS
From old datasheet system

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