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IRF[International Rectifier]
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| Part No. |
IRFN240
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| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1548
HEXFET(R) POWER MOSFET
200 Volt, 0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
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| File Size |
181.17K /
6 Page |
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it Online |
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| |
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International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRFN250
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| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1549
HEXFET(R) POWER MOSFET
200 Volt, 0.100 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压，的Rds（on）\u003d 0.100ohm，身份证\u003d 27.4A
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| File Size |
180.78K /
6 Page |
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it Online |
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| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRFN340
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| OCR Text |
index
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Provisional Data Sheet No. PD-9.1550
HEXFET(R) POWER MOSFET
400 Volt, 0.55 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A) 功率MOSFET N沟道BVdss \u003d00V，的Rds（on）\u003d 0.55ohm，身份证\u003d 10A条）
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| File Size |
175.28K /
6 Page |
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it Online |
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| |
|
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IRF[International Rectifier]
|
| Part No. |
IRFN350
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| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1551
HEXFET(R) POWER MOSFET
400 Volt, 0.315 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)
|
| File Size |
176.61K /
6 Page |
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it Online |
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| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRFN450
|
| OCR Text |
index
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Provisional Data Sheet No. PD-9.418A
HEXFET(R) POWER MOSFET
500 Volt, 0.415 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds（on）\u003d 0.415ohm，身份证\u003d 12A条）
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| File Size |
175.61K /
6 Page |
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it Online |
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| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRFN9140
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| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1553
HEXFET(R) POWER MOSFET
-100 Volt, 0.20 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)
|
| File Size |
179.78K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRFNG40
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| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1555
HEXFET(R) POWER MOSFET
1000 Volt, 3.5 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)
|
| File Size |
176.18K /
6 Page |
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it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRFNG50
|
| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.1556
HEXFET(R) POWER MOSFET
1000 Volt, 2.0 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) 功率MOSFET N沟道BVdss \u003d 1000V的的Rds（on）\u003d 2.0ohm，身份证\u003d 5.5A
|
| File Size |
175.24K /
6 Page |
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it Online |
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| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRFU2605 IRFR2605
|
| OCR Text |
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PD - 9.1253
IRFR2605 IRFU2605
HEXFET(R) Power MOSFET
Ultra Low On-Resistance ESD Protected Surface Mount (IRFR2605) Straight Lead (IRFU2605) 150C Operating Temperature Repetitive Avalanche Rated Fast Switchi... |
| Description |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
|
| File Size |
301.27K /
8 Page |
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it Online |
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| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRFV260
|
| OCR Text |
index
Next Data Sheet
Provisional Data Sheet No. PD-9.2002
IRFV260 HEXFET(R) TRANSISTOR
N-CHANNEL
200 Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The ... |
| Description |
TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
|
| File Size |
80.91K /
4 Page |
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it Online |
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