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  least material condition Datasheet PDF File

For least material condition Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    DF2S8.2S

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2S
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 115.34K  /  3 Page

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    DF3A6.2LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 138.76K  /  3 Page

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    DF3A5.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.71K  /  3 Page

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    DF3A3.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.32K  /  3 Page

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    DF3A3.6FE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.6FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 150.59K  /  3 Page

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    DF3A3.3FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 124.78K  /  3 Page

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    DF3A3.3FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.06K  /  3 Page

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    DF2S16FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S16FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 130.11K  /  3 Page

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    DF2S12FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S12FS
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 152.57K  /  3 Page

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    DF5A3.6CFU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF5A3.6CFU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; condition Iz at Vz (mA): 5; C (pF) max: -; condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 161.17K  /  3 Page

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For least material condition Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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