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20121 CMF50 4688M LA5006M 6603U 45DB011 170M3209 0461K00
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    FAIRCHILD[Fairchild Semiconductor]
Part No. RF1S640SM IRF640 RF1S640
OCR Text ...ated * SOA is Power Dissipation limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Informat...
Description N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

File Size 129.34K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. RF340
OCR Text ...ated * SOA is Power-Dissipation limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC B...
Description 10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET

File Size 55.07K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RFD16N05LSM RFD16N05L RFD16N05LSM9A
OCR Text ...ents * SOA is Power Dissipation limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC B...
Description 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

File Size 126.45K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RFD4N06LSM RFD4N06L RFD4N06LSM9A
OCR Text ...uits * SOA is Power Dissipation limited * 175oC Rated Junction Temperature * Logic Level Gate * High Input Impedance * Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM PACKAGE TO-251AA TO-252AA BRAND RFD4N06L RFD4...
Description 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

File Size 347.21K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. RFF60P06
OCR Text ...Version: RFG60P06E. Current is limited by the package capability. Features * 25A, 60V * rDS(ON) = 0.030 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 150oC Operating Temperature * R...
Description 25A? 60V, 0.030 Ohm, P-Channel Power MOSFET
25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET
25A/ 60V/ 0.030 Ohm/ P-Channel Power MOSFET

File Size 88.23K  /  8 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.70mH Pulse width 400s; duty cycle 2%. RG = 25, IAS = 28A, VGS=10V ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... 10000 OPERATION IN THIS AREA limited BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 C ID, Drain-to-Source Current (A) 1000 10 100 100sec 1msec TJ = 25 C 1 10 Tc = 25C Tj = 150C Single Pulse 1 1 ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    INTERSIL[Intersil Corporation]
Part No. RFP10P15
OCR Text ....500 * SOA is Power Dissipation limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC B...
Description 10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET
-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET

File Size 303.12K  /  5 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current ...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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