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loops Datasheet PDF File

For loops Found Datasheets File :: 5181 Search Time::1.297ms
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				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP23P06V ON2569
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	192.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2P50 MTP2P50E ON2583
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
File Size	230.76K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055VL MTP3055VL_D ON2587
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	161.53K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon）\u003d 0.15欧姆 From old datasheet system
File Size	160.18K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP30N06VL MTP30N06VL_D ON2590
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
File Size	207.41K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon）\u003d 0.080欧姆 From old datasheet system
File Size	190.77K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MTP40N10E ON2608 ON2607
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM From old datasheet system
File Size	157.60K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP50N06EL MTP50N06
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
File Size	232.16K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
Part No.	MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	From old datasheet system TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
File Size	195.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
Part No.	MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text	...e in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbe...
Description	From old datasheet system TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
File Size	179.25K / 8 Page	View it Online	Download Datasheet

For loops Found Datasheets File :: 5181 Search Time::1.297ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |