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For n-gate Found Datasheets File :: 74577 Search Time::2.594ms
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				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	... integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830...Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I S D , Reverse D rain Current (A ) O P...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -19 -76 UNITS A A S Source to Drain Diode Voltage (N...GATE TO SOURCE VOLTAGE (V) -14 FIGURE 6. SATURATION CHARACTERISTICS 0.26 rDS(ON), DRAIN TO SO...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -3.5 -14 UNITS A A S Source to Drain Diode Voltage (...GATE TO SOURCE VOLTAGE (V) -10 FIGURE 6. SATURATION CHARACTERISTICS 5 PULSE DURATION = 2s 4 ON R...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...gy Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...howing the integral reverse G p-n junction diode. S TJ = 25C, I S = -1.25A, VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes: R...Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF9953 400 -VGS , Gate-to-...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...gy Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.10 T o p V iew ...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	... integral reverse --- --- -27 p-n junction diode. S --- --- -5.5 V TJ = 25C, IS = -6.7A, VGS = 0V --- 80 160 ns TJ = 25C, IF = -6.7A --- 96...Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery C...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	... integral reverse --- --- -44 p-n junction diode. S --- --- -6.3 V TJ = 25C, IS = -11A, VGS = 0V --- 100 200 ns TJ = 25C, IF = -11A --- 320...Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery C...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	... integral reverse --- --- -48 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -7.2A, VGS = 0V --- 47 71 ns TJ = 25C, IF = -7.2A --- 84 ...Gate Charge Vs. Gate-to-Source Voltage 100 100 -I S D , Reverse D rain Current (A ) O P ...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	... integral reverse --- --- -48 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -7.2A, VGS = 0V --- 47 71 ns TJ = 25C, IF = -7.2A --- 84 ...Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Ch...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

For n-gate Found Datasheets File :: 74577 Search Time::2.594ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |