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Infineon Technologies A...
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| Part No. |
PXAC192908FVV1R250
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| OCR Text |
... = 0.6 a, v gs(peak) = 0.55 v, p out = 70 w avg, ? 1 = 1990 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01%...1db = 120 w typ - peak: p 1db = 220 w typ ? typical pulsed cw performance, 1990 mhz, 28 v, comb... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ?1995 MHz
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| File Size |
360.02K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTVA104501EHV1R250
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| OCR Text |
...36 38 40 42 44 efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25 c, ...1db p 3db max p droop (pulse) @ p 1db t r (ns) @p 1db t f (ns) @p 1db gain (db) eff ... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 ?1215 MHz
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| File Size |
342.54K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PTFC262157FHV1R250 PTFC262157FHV1R250XTMA1 PTFC262157FHV1R0XTMA1
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| OCR Text |
... 0.01% ccdr - output power at p 1db = 50 w - effciency = 29% - gain = 19.5 db - acpr = C31.5 dbc at 2690 mhz ? capable of handling 10:1 vswr @ 28 v, 180 w (cw) output power ? integrated esd protection: human body model, class 1c... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ?2690 MHz
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| File Size |
390.48K /
9 Page |
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Infineon Technologies A...
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| Part No. |
PXAC203302FVV1R250
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| OCR Text |
... = 900 ma, v gspeak = 1.1 v, p out = 56 w avg, ? 1 = 2025 mhz, 3gpp signal, channel bandwidth = 3.84mhz, peak/average = 10 db @ 0.01% ...1db = 130 w typ - peak : p 1db = 200 w typ ? typical pulsed cw performance, 2025 mhz, 28 v, co... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ?2025 MHz
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| File Size |
349.01K /
7 Page |
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Infineon Technologies A...
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| Part No. |
PXAC201602FCV1R250
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| OCR Text |
...erty design - main: 55 w typ (p 1db ) - peak: 85 w typ (p 1db ) ? broadband internal matching ? pulsed cw performance, 1960 mhz, 28 v - output power at p 1db = 100 w - gain = 18 db - effciency = 55% ? capable of handling 10:1... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ?1920 MHz, 2010 ?2025 MHz
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| File Size |
376.10K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXAC260622SC PXAC260622SC-15
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| OCR Text |
...) v dd = 28 v, i dq = 115 ma, p out = 8.9 w avg, ? 1 = 2690 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01...1db ) - peak: 50 w typ (p 1db ) ? typical pulsed performance in a doherty confgura - tion, at 39.5 ... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
410.29K /
7 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXAC261212FC
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| OCR Text |
...hing ? asymmetric design - main p 1db = 50 w - peak p 1db = 75 w ? cw performance in doherty con? guration, 2635 mhz, 28 v - output power at p 1db = 107 w - gain = 14.4 db - ef? ciency = 57% ? integrated esd protection: human body mod... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
204.66K /
10 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXAC261212FCV1R250XTMA1 PXAC261212FC-16
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| OCR Text |
...g ? asymmetric design - main p 1db = 50 w - peak p 1db = 75 w ? cw performance in doherty confguration, 2635 mhz, 28 v - output power at p 1db = 107 w - gain = 14.4 db - effciency = 57% ? integrated esd protection: human body mo... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ?2690 MHz
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| File Size |
428.14K /
10 Page |
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it Online |
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