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				Agilent(Hewlett-Packard)
Part No.	HMMC-3022
OCR Text	...nput power sensitivity: on-chip pre- and post-amps -20 to +10 dbm (1 - 8 ghz) -15 to +10 dbm (8 - 10 ghz) -10 to +4 dbm (10 - 12 ghz) ? dual...terminated ) dbm -74 p feedthru power level of \| in appearing at rfout or rfout (@ \| in = 10 ghz...
Description	DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标 DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
File Size	136.04K / 8 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard)
Part No.	HMMC-3024
OCR Text	...nput power sensitivity: on-chip pre- and post-amps -25 to +10 dbm (1 - 8 ghz) -15 to +8 dbm (8 - 10 ghz) -10 to +2 dbm (10 - 12 ghz) ? dual-...terminated ) dbm -73 p feedthru power level of \| in appearing at rfout or rfout (@ \| in = 10 ghz...
Description	DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标 DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路4定标
File Size	139.14K / 8 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard)
Part No.	HMMC-3028
OCR Text	...nput power sensitivity: on-chip pre- and post-amps -20 to +10 dbm (1 - 8 ghz) -15 to +10 dbm (8 - 10 ghz) -10 to +5 dbm (10 - 12 ghz) ? dual...terminated ) dbm -81 p feedthru power level of \| in appearing at rfout or rfout (@ \| in = 10 ghz...
Description	DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-8 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
File Size	132.90K / 8 Page	View it Online	Download Datasheet

				Summit Microelectronics, Inc.
Part No.	SMB139
OCR Text	... battery voltage set point o pre-charge, fast charge, termination current o fast charge voltage threshold o temperature limits o ...terminated. when the battery voltage reaches the pre-charge to fast- charge voltage level, the smb1...
Description	Programmable Linear Battery Charger in 1.3 x 2.1 uCSP
File Size	395.05K / 27 Page	View it Online	Download Datasheet

				Freescale Semiconductor...
Part No.	MC33937APEK
OCR Text	... phase field effect transistor pre-driver the 33937a is a field effect transistor (fet) pre-drivers designed for three phase motor control...terminated (floating) however, it is recommended that the exposed pad be terminated to pin 29 (vs...
Description	Three Phase Field Effect Transistor Pre-driver
File Size	669.97K / 48 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 5962D0053601TXC 5962D0053602QXA 5962D0053602TUC 5962D0053602QXC 5962D0053603QUA 5962D0053601TUA 5962D0053601QXX 5962D0053601TUC 5962D0053601TUX 5962D0053602TUX 5962D0053602QUX 5962D0053602TXX 5962D0053602QXX 5962D0053602QUA 5962D0053601QXA 5962D0053601TXX 5962D0053602QUC 5962D0053602TXC 5962D0053601QXC 5962D0053602TUA 5962D0053601QUX 5962D0053601QUC 5962D0053603QUX 5962D0053603QXA 5962D0053603QXX 5962D0053603QXC 5962D0053603QUC UT9Q512-IWX UT9Q512-IWC UT9Q512-20ICC UT9Q512-20ICX UT9Q512-20IPC UT9Q512-20IWC UT9Q512-20UCC UT9Q512-20UCA UT9Q512-20UCX UT9Q512-20UWA UT9Q512-ICA UT9Q512-IPC UT9Q512-20ICA UT9Q512-20IWA UT9Q512-20IWX UT9Q512-20UPC UT9Q512-20UWC UT9Q512-20UWX UT9Q512-ICC UT9Q512-ICX UT9Q512-IWA UT9Q512-UCA 5962D0053603TXC 5962D0053604TXC 5962L0053601TXC 5962L0053602TXC 5962L0053603TXC 5962L0053604TXC 5962P0053601TXC 5962P0053602TXC 5962P0053603TXC 5962P0053604TXC 5962L0053601QUA 5962L0053601QUC 5962L0053601QUX 5962L0053601QXA 5962L0053601QXC 5962L0053601QXX 5962L0053601TUA 5962L0053601TUC 5962L0053601TUX 5962L0053601TXX 5962L0053602QUA 5962L0053602QUC 5962L0053602QUX 5962L0053602QXA 5962L0053602QXC 5962L0053602TUA 5962L0053602
OCR Text	...y array 1024 rows 512x8 columns pre-charge circuit clk. gen. r o w s e l e c t a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 i/o circuit column select dat...terminated by w going high, with e s till active. the write pulse width is defined by t wlwh w...
Description	512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
File Size	128.60K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor...
Part No.	MC34937APEK
OCR Text	... phase field effect transistor pre-driver the 34937a is a field effect transistor (fet) pre-drivers designed for three phase motor control...terminated (floating) however, it is recommended that the exposed pad be terminated to pin 29 (vs...
Description	Three Phase Field Effect Transistor Pre-driver
File Size	722.48K / 49 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MPC92433
OCR Text	...llator frequency fXTAL, the PLL pre-divider P, the feedback-divider M, and the PLL post-divider N determine the output frequency. The feedba...terminated 50 to VCC - 2.0 V. The second high-frequency output, QB, can be configured to run at eit...
Description
File Size	394.81K / 20 Page	View it Online	Download Datasheet

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