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  rbe Datasheet PDF File

For rbe Found Datasheets File :: 5209    Search Time::1.422ms    
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    TLP570 TLP571

TOSHIBA[Toshiba Semiconductor]
Part No. TLP570 TLP571
OCR Text ..., Ta = 85C VCE = 24 V, Ta = 85C rbe = 10 M VCB = 10 V VCE = 5 V, IC = 10 mA V = 0, f = 1 MHz Min. 1.0 35 7 80 7 Typ. 1.15 30 10 0.5 0.01 50k 10 Max. 1.3 10 200 300 10 Unit V A pF V V V V nA A A nA pF Coupled Electr...
Description Photocoupler GaAs IRed & Photo .Transistor
Programmable Controllers AC / DC.Input Module Solid State Relay

File Size 705.44K  /  8 Page

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    TLP733 TLP734

TOSHIBA[Toshiba Semiconductor]
Part No. TLP733 TLP734
OCR Text ...hFE CCE VCE = 24 V, Ta = 85C rbe = 1M VCB = 10 V VCE = 5 V, IC = 0.5 mA V = 0, f = 1 MHz 3 2002-09-25 TLP733,TLP734 Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condit...
Description GaAs Ired&Photo-Transistor
GaAs Ired&Photo−Transistor

File Size 171.29K  /  11 Page

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    2508DF

Philips Semiconductors
Part No. 2508DF
OCR Text ...URATION case SYMBOL c b rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER...
Description Search --To BU2508DF

File Size 83.58K  /  7 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 BSP61 Q62702-P1167
OCR Text ...breakdown voltage1) IC = 10 mA, rbe = 150 BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 A, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 A, IB = 0 Collector-emitter cutoff current VCE = VCERmax, VBE =...
Description From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

File Size 153.36K  /  5 Page

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    H11A2 H11A3 4N35H11A4 H11A4 4N37 H11A1V 4N37.3SD 4N37.S 4N37.SD 4N37.W 4N37S 4N37SR2 4N37SR2V 4N37SV 4N37T 4N37TV 4N37V

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
光电耦合
Fairchild Semiconductor, Corp.
Part No. H11A2 H11A3 4N35H11A4 H11A4 4N37 H11A1V 4N37.3SD 4N37.S 4N37.SD 4N37.W 4N37S 4N37SR2 4N37SR2V 4N37SV 4N37T 4N37TV 4N37V 4N25300 H11A3SD H11A23S H11A23SD H11A1300 H11A1300W H11A1W H11A2W H11A33S H11A3300W H11A33SD H11A5SD H11A53SD H11A3W H11A4SD H11A43SD H11A5W H11A2300 H11A2300W H11A1SD H11A5300 H11A5300W H11A13S H11A13SD 4N25FM 4N25FVM 4N25M 4N25S H11A3FM H11A3FR2M H11A3FR2VM H11A3FVM H11A4FR2VM H11A4FVM H11A4FR2M H11A3SR2M H11A3SR2VM H11A1FVM H11A1FR2VM H11A1SM H11A1FM H11A5FM H11A5FR2M H11A5FR2VM H11A2SR2M H11A2SR2VM H11A3TM H11A3TVM 4N37300 4N37300W 4N36300 4N36300W 4N363S H11A4SR2M H11A4SR2VM 4N36W 4N35300 4N35300W 4N36SD 4N36SR2VM 4N36SR2M 4N36SM 4N36SVM H11A1TVM H11A1TM H11A2TVM H11A2TM 4N35FR2VM H11A5TVM 4N35SR2VM 4N35TVM 4N35SVM 4N25TVM 4N35SD 4N26FVM 4N26FM 4N26FR2VM H11A2VM 4N27W 4N25 4N26 4N37.3S 4N28V 4N28S 4N25.3SD 4N27.W H11A3.SD 4N26SR2-M H11A1.300W 4N35SV 4N35.S 4N27V 4N27T 4N28T H11A3.3SD H11A3.300 H11A5.SD H11A3.300W 4N36S 4N36S-M 4N36SR2-M 4N36SV-M 4N36.SD 4N26T-M 4N35T-M 4N27T-M 4N36SR2V 4N35.W 4N36T-M 4N37T-M 4N25T-M 4N26.W 4N28T-M H11A3.W H11A4.SD H11A5.3S H11A4.3SD 4N36TV H11A5.W 4N36V 4N35TV 4N36.3SD 4N35.3SD 4N37.300 H11A1.SD H11A1S H11A5.300W 4N25.W 4N26T
OCR Text ...A4 4N36 H11A5 Fig. 7 CTR vs. rbe (Unsaturated) (Black Package) 1.0 1.0 Fig. 8 CTR vs. rbe (Unsaturated) (White Package) NORMALIZED CTR ( CTRrbe / CTRrbe(OPEN)) 0.9 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0...
Description    GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
6-Pin DIP Package Phototransistor Output Optocoupler
DIODE SWITCHING SINGLE 200V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
DIODE SWITCHING DUAL ISOLATED 250V 200mA-Io 200mW 50ns-trr SOT-363 3K/REEL
DIODE SCHOTTKY 40V 200MA SOT523
0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing
KPT06A18-11SF26F97
DIODE ZENER SINGLE 200mW 22Vz 5mA-Izt 0.0567 0.1uA-Ir 15.4 SOT-323 3K/REEL
CONNECTOR ACCESSORY
Tuner custom IC 32-TSSOP
DIODE SWITCHING SINGLE 250V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
DIODE SWITCHING SINGLE 120V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Fluoropolymer; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes
Dual Pole Combination: Form-A & B
Incandescent Lamp; Supply Voltage:30VDC; Lamp Base Type:Bayonet; Power Rating:10W; Bulb Size:T-20; Average Rated Bulb Life:2000h; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
OSC 5V SMT 7X5 CMOS PROGRM
IC,MODEM,CODEC,CSP1034S,38P,TSSOP 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 一般用途的6引脚光电晶体管光电耦合
KPT06F12-3SF187 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
INDUCTOR, 10UH 20%

File Size 208.68K  /  15 Page

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    2506DF

Philips Semiconductors
Part No. 2506DF
OCR Text ...URATION case SYMBOL c b rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER...
Description Search --To BU2506DF

File Size 81.98K  /  7 Page

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    MCT5211 MCT5210

SIEMENS A G
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. MCT5211 MCT5210
OCR Text ... - LED CURRENT - mA 100 10 6 rbe - BASE EMITTER RESISTOR - 10 7 Figure 12. Transistor current gain vs. base current 800 HFE - DC CURRENT GAIN - (Ice/Ib) 700 Ta = 25C 600 500 400 300 200 100 .1 2V 1V 0.4 V 1 10 100 Ib - BASE CURREN...
Description AlGaAs LED/ Phototransistor Optocoupler
From old datasheet system

File Size 47.05K  /  3 Page

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    BF721T1

Motorola Inc
Motorola, Inc
Part No. BF721T1
OCR Text ...eakdown Voltage (IC = -100 Adc, rbe = 2.7 k) Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = - 200 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = - 250 Vdc, rbe = 2.7 k) (VCE = - 200 Vdc, rbe...
Description PNP SILICON TRANSISTOR SURFACE MOUNT

File Size 75.38K  /  4 Page

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    BF721T1 BF721T1_D ON0211

ON Semiconductor
Part No. BF721T1 BF721T1_D ON0211
OCR Text ...eakdown Voltage (IC = -100 Adc, rbe = 2.7 k) Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = - 200 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = - 250 Vdc, rbe = 2.7 k) (VCE = - 200 Vdc, rbe...
Description From old datasheet system
PNP SILICON TRANSISTOR SURFACE MOUNT

File Size 104.33K  /  6 Page

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For rbe Found Datasheets File :: 5209    Search Time::1.422ms    
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