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Golledge Electronics, Ltd.
Vectron International, Inc.
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| Part No. |
UT69151GBXD UT69151WBCR UT69151GBA4 UT69151GBAD UT69151GSXH UT69151GBCD UT69151GBCM
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| Description |
Advanced 6-issue risc86 superscalar microarchitecture processor
Type: GDDR3; GPU Clock (MHz): 590; Memory Clock (MHz): 500; Stream Processing Units: 4 pixel shaders, 2 vertex shaders; ATI CrossFireX™ ready
Ethernet CTLR Single Chip 10Mbps/100Mbps 3.3V/3.3V/3.3V 160-Pin PQFP Tray
ETHERNET:MEDIA ACCESS CONTROLLER (MAC)
Elansc400 single-chip, low-power, PC/AT-compatible microcontroller 接口IC
Interface IC 接口IC
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| File Size |
2,806.23K /
90 Page |
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it Online |
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Square D by Schneider Electric
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| Part No. |
CD720260OZ CD720460OY CD720160OZ CD720460OZ CD720660OZ CD720860OZ CD721060OZ CD771260OY
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| Description |
; L3 Cache Size (KB): 2048; CMOS: 65nm SOI; Socket: AM2 ; AMD Business Class: No
Type: DDR2; GPU Clock (MHz): 480; Memory Clock (MHz): 400; Stream Processing Units: 4 pixel shaders, 2 vertex shaders; ATI CrossFireX™ ready
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|100V V(RRM)|80A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|80A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|80A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|80A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|80A I(T)
晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 80A条疙（T
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|80A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 80A条疙（T
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| File Size |
470.43K /
6 Page |
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it Online |
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
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| Description |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, busy; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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| File Size |
1,602.57K /
119 Page |
View
it Online |
Download Datasheet |
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|
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http://
Vishay Siliconix
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
KEMET Corporation
飞思卡尔半导体(中国)有限公司
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| Part No. |
CCF55261KFKE36 CCF55261KFKR36 CCF55261RFKE36 CCF55261RFKR36 CCF55267KFKE36 CCF55267KFKR36 CCF55267RFKE36 CCF55267RFKR36 CCF55215RFKE36 CCF55215RFKR36 CCF55221KFKE36 CCF55221KFKR36 CCF55221RFKE36 CCF55221RFKR36 CCF55226KFKE36 CCF551M74FKE36 CCF551M74FKR36 CCF-6016K2FKR36 CCF55280KFKE36 CCF55280KFKR36 CCF55274KFKE36 CCF55274KFKR36 CCF55274RFKE36 CCF55274RFKR36 CCF55226KFKR36 CCF55226RFKE36 CCF55226RFKR36 CCF55249KFKE36 CCF55249KFKR36 CCF55249RFKE36 CCF55249RFKR36 CCF-55412KFKR36 CCF55294KFKE36 CCF55294KFKR36 CCF60604KFKE36 CCF-6078K7FKR36 CCF55191KFKE36 CCF5524K9FKE36 CCF55205RFKE36 CCF55205RFKR36 CCF-60324RFKE36 CCF55280RFKE36 CCF55280RFKR36 CCF55255RFKE36 CCF55255RFKR36 CCF5519K1FKR36 CCF5517K4FKR36 CCF551M58FKE36 CCF551M58FKR36 CCF55232RFKE36 CCF55232RFKR36 CCF551K18FKE36 CCF55200KFKR36 CCF5524K3FKR36 CCF5527K4FKR36 CCF551M00FKE36 CCF551M05FKR36 CCF551M10FKR36 CCF551M13FKR36 CCF551M82FKE36 CCF551M82FKR36 CCF551M87FKE36 CCF551M87FKR36 CCF551K05FKE36 CCF55182RFKR36 CCF551M91FKE36 CCF551M91FKR36 CCF551M62FKE36 CCF551M62FKR36 CCF55210KFKE36 CCF55210KFKR36 CCF55210RFKE36 CCF55210RFKR36 CCF-6022K6FKR36 CCF-60137KFKE36 CCF60137KFKE36 CCF-60137KFKR36 CCF60137KFKR36 CCF-60137RFKE36 CCF6013
|
| Description |
HEADLIGHT 3 LED W/3AAA
SWITCH LEAF LEVER W/ROLLER
SWITCH ROLLER
Silver Mica Capacitor; Capacitance:3000pF; Capacitance Tolerance: /- 5%; Series:CD30; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No
FINISHED GOODS
16B, FLASH, CANS,2XAT
Aluminum Electrolytic Radial Lead 5mm Length Wide Temp Range Capacitor; Capacitance: 10uF; Voltage: 50V; Case Size: 6.3x5 mm; Packaging: Bulk
Polyester Film Capacitor (AC Suppression); Capacitance:0.12uF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:100V; Terminal Type:Radial Leaded; Series:BF; Leaded Process Compatible:No; Dielectric Material:Metalized Polyester
DIODE ZENER SINGLE 300mW 13Vz 5mA-Izt 0.0642 0.1uA-Ir 8 SOT-23 3K/REEL
Silver Mica Capacitor; Capacitance:4300pF; Capacitance Tolerance: /- 5%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:No RoHS Compliant: No
DIODE ZENER DUAL ISOLATED 200mW 11Vz 5.45mA-Izt 0.05 0.1uA-Ir 8 SOT-363 3K/REEL
MB 8C 8#12 PIN RECP
Silver Mica Capacitor; Capacitance:750pF; Capacitance Tolerance: 5%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:No RoHS Compliant: No
DIODE ZENER SINGLE 250mW 24Vz 5mA-Izt 0.05 0.1uA-Ir 16.8 DFN1006-2 3K/REEL
CB 3C 3#8 PIN RECP BOX
Silver Mica Capacitor; Capacitance:4700pF; Capacitance Tolerance: /- 1%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
Silver Mica Capacitor; Capacitance:500pF; Capacitance Tolerance: /- 2%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:No RoHS Compliant: No
HOA Series Connectorized Transmissive Optoschmitt Sensor, Transistor Output, Plastic Package
Electrical Outlet Connector; Contact Rating:20A at 125VAC; Current Rating:20A; Color:Orange RoHS Compliant: Yes
DC/DC TH 3W 5V-5V DIP24 RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:15VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:8200uF RoHS Compliant: No
BOX ABS FR GREY 6.5X2.8X1.0,1
BOX ABS FR GREY 3.3X2.2X1.4,1
ER 24 D/C PLAS 金属膜电阻，工业％容
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):8; Forward Current:10mA; Forward Voltage:5V; LED Color:Yellow; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No 金属膜电阻，工业％容
PTC Thermistor C 884-A 120-A 70 5X2,5 RoHS Compliant: Yes 金属膜电阻，工业％容
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 金属膜电阻，工业％容
IGBT; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):3V; Power Dissipation, Pd:600W; Collector Current:150A; Collector Emitter Voltage, Vceo:600V; Package/Case:Module RoHS Compliant: Yes 金属膜电阻，工业％容
Metal Film Resistors, Industrial, 1% Tolerance 金属膜电阻，工业％容
AUTO D/TRANSD 3 @ 20V DC 80DB 金属膜电阻，工业％容
DIODE ZENER SINGLE 150mW 22Vz 5mA-Izt 0.05 0.1uA-Ir 15.4 SOD-523 3K/REEL 金属膜电阻，工业％容
DIODE ZENER SINGLE 300mW 11Vz 5mA-Izt 0.0545 0.1uA-Ir 8 SOT-23 3K/REEL 金属膜电阻，工业％容
DIODE ZENER TRIPLE ISOLATED 200mW 11Vz 5mA-Izt 0.0545 0.1uA-Ir 8 SOT-363 3K/REEL 金属膜电阻，工业％容
CAP ELECT 47UF 50V TG SMD 金属膜电阻，工业％容
Weather ready Folding LED Lantern; Battery Size Code:D; No. of Batteries:4; Approval Categories:ANSI/NEDA 13; Color:Red 金属膜电阻，工业％容
CONNECTOR ACCESSORY 连接器附
DIODE ZENER SINGLE 150mW 13Vz 5mA-Izt 0.0642 0.1uA-Ir 8 SOT-523 3K/REEL 金属膜电阻，工业％容
CABLE ASSEMBLY; 2.4mm MALE TO 2.9mm MALE; 50 OHM, RG405/U (.085" BARE COPPER); 48" CABLE LENGTH 金属膜电阻，工业％容
DIODE ZENER TRIPLE ISOLATED 200mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23 SOT-363 3K/REEL 金属膜电阻，工业％容
CAP POLYFILM BOX .15UF 100V 5% 金属膜电阻，工业％容
MCF5213 KIRIN 金属膜电阻，工业％容
XTAL MTL SMT HC49/USM 金属膜电阻，工业％容
5015 RR 3#12 PIN RECP 金属膜电阻，工业％容
Metal Film Resistors, Industrial, 1% Tolerance 金属膜电阻，工业1％容
MCHC908JR32PBE 金属膜电阻，工业％容
DIODE ZENER SINGLE 350mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23 SOT-23 3K/REEL 金属膜电阻，工业％容
INTELLIGENT DISP 4CHAR 5X7 GRN 金属膜电阻，工业％容
SWITCH LEVER 金属膜电阻，工业％容
DIODE ZENER SINGLE 200mW 12Vz 5mA-Izt 0.0539 0.1uA-Ir 8 SOT-323 3K/REEL 金属膜电阻，工业1％容
CAP 100UF 100V 20V TANT SMD-7343-31 TR-7 LOWESR-150 金属膜电阻，工业％容
BOX WATRTGHT NAT 5.89X2.51X1.03,1 金属膜电阻，工业％容
QTE-040-07-F-D-A 金属膜电阻，工业％容
TRANS PNP 180VCEO 1.5A TO-220D 金属膜电阻，工业％容
Silver Mica Capacitor; Capacitance:4700pF; Capacitance Tolerance: /- 1%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:No RoHS Compliant: No 金属膜电阻，工业％容
CAP 1000PF 50V CERAMIC X7R 1206 金属膜电阻，工业％容
CAP 1.2UF 10V CERAMIC X7R 1206 金属膜电阻，工业％容
12VDC 104DB 3-TERM CERAM BUZZER 金属膜电阻，工业％容
5015 RR 37#16 SKT PLUG 金属膜电阻，工业％容
5015 RR 4#16S SKT RECP 金属膜电阻，工业％容
CAP 0.1UF 16V 2% FILM-PEN SMD-1210 TR-7 SN100/NIBAR 金属膜电阻，工业％容
Aluminum Electrolytic Radial Lead 5mm Length Wide Temp Range Capacitor; Capacitance: 4.7uF; Voltage: 35V; Case Size: 4x5 mm; Packaging: Bulk
BOARD EVALUATION FOR HRF-AT4610
15VPP 80DB 2 TERM CERAM BUZZER
TV 41C 41#20 PIN WALL RECP
Metal Film Resistors, Industrial, 1% Tolerance
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