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  TLP535GB-TP4 Datasheet PDF File

For TLP535GB-TP4 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    Unisonic Technologies Co., Ltd.
Part No. UTP45N02L-TN3-R UTP45N02L-TN3-T UTP45N02-TN3-T UTP45N02-TN3-R
Description 45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE PACKAGE-3
45 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
N-CHANNEL ENHANCEMENT MODE

File Size 247.44K  /  5 Page

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HUA FENG CIRCUIT





    STP40N03L-20 4886

ST Microelectronics
STMicroelectronics
Part No. STP40N03L-20 4886
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR

File Size 64.40K  /  7 Page

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    STP4NA100 5310

STMICROELECTRONICS[STMicroelectronics]
Part No. STP4NA100 5310
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 76.53K  /  5 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    ON Semi
Part No. MTP4N40E_D ON2609
Description TMOS POWER FET 4.0 AMPERES 400 VOLTS
From old datasheet system

File Size 202.59K  /  8 Page

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    BEL[Bel Fuse Inc.]
Part No. 5VT1 5VT1.25 5VT1.6 5VTP6.3 5VT 5VT2 5VT2.5 5VT3.15 5VT4 5VT5 5VT6.3 5VTP1 5VTP1.25 5VTP1.6 5VTP2 5VTP2.5 5VTP3.15 5VTP4 5VTP5
Description TIME-LAG FUSE SERIES (HIGH SURGE-PROOF, LOW-BREAKING CAPACITY)

File Size 90.55K  /  2 Page

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    DinTek Semiconductor Co,.Ltd
Part No. DTP4N60F DTP4N6013
Description Power MOSFET Reduced Gate Drive Requirement

File Size 1,904.68K  /  11 Page

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

File Size 155.71K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTP4435BV8
Description P-Channel Enhancement Mode Power MOSFET

File Size 360.69K  /  9 Page

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    Cystech Electonics Corp...
Part No. MTP4435AJ3
Description P-Channel Enhancement Mode Power MOSFET

File Size 442.30K  /  9 Page

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