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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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| Part No. |
IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A-7QI IDT5993A IDT5993A-2Q IDT5993A-2QI IDT5993A-7Q IDT5993A-5QI8 IDT5993A-2Q8 IDT5993A-7QI8
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| Description |
From old datasheet system igbt module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:module; transistor Polarity:N Channel RoHS Compliant: Yes igbt module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No igbt module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No igbt module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:module; transistor Polarity:N Channel RoHS Compliant: Yes PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28 Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
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| File Size |
62.51K /
8 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MP4015
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| Description |
power transistor module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. TOSHIBA power transistor module
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| File Size |
129.83K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MIG100Q6CMB1X
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| Description |
Intelligent power module Silicon N Channel igbt High power Switching Applications Motor Control Applications TOSHIBA Intelligent power module Silicon N Channel igbt From old datasheet system
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| File Size |
154.11K /
11 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
CM200DY24E
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| Description |
transistor | igbt power module | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
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| File Size |
320.14K /
4 Page |
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it Online |
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| Part No. |
IET26075
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| Description |
transistor | igbt power module | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| igbt功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
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| File Size |
339.15K /
4 Page |
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it Online |
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KOA Speer Electronics,Inc.
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| Part No. |
CM100TF12E
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| Description |
transistor | igbt power module | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| igbt功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 100号A一(c
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| File Size |
317.16K /
4 Page |
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it Online |
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Mitsubishi Electric, Corp.
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| Part No. |
CM100DY12H
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| Description |
transistor | igbt power module | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| igbt功率模块|半桥| 600V的五(巴西)国际消费电子展| 100号A一(c
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| File Size |
279.39K /
4 Page |
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it Online |
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TE Connectivity, Ltd.
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| Part No. |
IEF21KA2
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| Description |
transistor | igbt power module | 3-PH BRIDGE | 1KV V(BR)CES | 25A I(C) 晶体管| igbt功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
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| File Size |
328.58K /
4 Page |
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it Online |
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| Part No. |
FS100R06KF2
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| Description |
transistor | igbt power module | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| igbt功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 100号A一(c
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| File Size |
39.95K /
1 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
2MBI100J120
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| Description |
transistor | igbt power module | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
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| File Size |
176.91K /
4 Page |
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it Online |
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