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For unclamped Found Datasheets File :: 13075 Search Time::1.343ms
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				STMicroelectronics
Part No.	STD60NF55LA STD60NF55LAT4
OCR Text	...ves the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5* (1.3BVDSSIAV) EAS(AR) = PD(AVE)*tAV Where: IAV is the allowable current in avalanche, PD(AVE) is the ave...
Description	N-channel 55V - 0.012Ω - 60A - DPAK STripFET II Power MOSFET N-channel 55V - 0.012ヘ - 60A - DPAK STripFET⑩ II Power MOSFET
File Size	303.17K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	PHP5N40
OCR Text	...; parameter Tj EAS, Normalised unclamped inductive energy (%) 1000 Switching times (ns) VDD = 200 V VGS = 10 V RD = 57 Ohms ID = 3.5 A Tj = 25 C 120 110 100 90 80 70 60 50 40 30 20 10 100 td(off) tf tr 10 td(on) 0 10 2...
Description	PowerMOS transistor
File Size	49.84K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS3682
OCR Text	... AN7514 and AN7515 Figure 6. unclamped Inductive Switching Capability 30 TC = 25oC 25 ID, DRAIN CURRENT (A) VGS = 10V VGS = 7V 30 25 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 20 TJ = 150oC 15...
Description	N-Channel PowerTrench MOSFET 100V/ 6A/ 35m N-Channel PowerTrench MOSFET 100V, 6A, 35mз
File Size	208.88K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS3672
OCR Text	...SOURCE VOLTAGE (V) Figure 5. unclamped Inductive Switching Capability 30 VGS = 10V VGS = 6V VGS = 5V 2.0 Figure 6. Transfer Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID,...
Description	100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFET
File Size	239.93K / 11 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	BSP75N BSP75NTA
OCR Text	...source current (body diode) (b) unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VDS(SC) VIN VIN...
Description	60V self-protected low-side IntellifetTM MOSFET switch
File Size	609.37K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STL60NH3LL0609 STL60NH3LL L60NH3LL
OCR Text	...e pulse safe operating area for unclamped inductive loads under the following conditions: PD(AVE) =0.5(1.3BVDSS IAV ) EAS(AR) =PD(AVE) tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in aval...
Description	N-channel 30V - 0.0065ohm - 30A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET
File Size	325.50K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHW7N60
OCR Text	...; parameter Tj EAS, Normalised unclamped inductive energy (%) 1000 120 110 100 90 80 70 60 50 40 30 20 10 0 100 tf tr td(on) 10 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 20 40 60 80 100 Starting Tj ( C) 1...
Description	PowerMOS transistor
File Size	51.89K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS8874
OCR Text	... AN7514 and AN7515 Figure 5. unclamped Inductive Switching Capability Figure 6. Transfer Characteristics 50 VGS = 10V 40. ID, DRAIN CURRENT (A) VGS = 5V 30 VGS = 3V VGS = 4V rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 14 ID = 16A...
Description	N-Channel PowerTrench MOSFET
File Size	375.11K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	14N05L
OCR Text	...es AN9321 and AN9322. FIGURE 6. unclamped INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 35 -55oC 175oC rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (m) 30 25 20 15 10 5 0 0 1.5 3.0 4.5 6.0 VG...
Description	Search --To RFD14N05L
File Size	211.03K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD45NF75 STD45NF75T4 D45NF75
OCR Text	...ves the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is t...
Description	N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET
File Size	449.36K / 12 Page	View it Online	Download Datasheet

For unclamped Found Datasheets File :: 13075 Search Time::1.343ms
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