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				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	... 1 50 CMOS SDRAM Unit V V C w mA Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended v...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF1500
OCR Text	...otorola Preferred Device 500 w (PEAK), 1025- 1150 MHz MICROwAVE POwER TRANSISTOR NPN SILICON CASE 355E-01, STYLE 1 MAXIMUM RATINGS ...freq = 1090 MHz 40 60 80 100 120 140 160 180 200 PIN, INPUT POwER (wATTS) Figure 2. Output Pow...
Description	MICROwAVE POwER TRANSISTOR
File Size	103.36K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF173CQ
OCR Text	...50 MHz, 28 V: Output Power = 80 w Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) * Low Thermal Resistance * Ruggedness Tested at R...freq = 1 MHz Coss 40 20 28 0 0.8 0.7 -25 TC, CASE TEMPERATURE (C) 8 12 16 20 24 VDS, ...
Description	N-CHANNEL BROADBAND RF POwER MOSFET
File Size	116.10K / 6 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF173 MRF173CQ
OCR Text	...50 MHz, 28 V: Output Power = 80 w Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) * Low Thermal Resistance * Ruggedness Tested at R...freq = 1 MHz 80 60 40 20 28 0 Crss , C iss , CAPACITANCE (pF) 1.1 ID = 3.0 A 1.0 A 500 mA 1.0 ...
Description	N-CHANNEL BROADBAND RF POwER MOSFETs VHF BAND, Si, N-CHANNEL, RF POwER, MOSFET
File Size	105.50K / 8 Page	View it Online	Download Datasheet

				Novatek N.A. ETC[ETC]
Part No.	NT6861 NT6861U
OCR Text	...0 VCL0 VCH0 ENV ENDK8 Rw Rw w Rw Rw R w R w R R R R w w R w R w $0006 $0007 $0008 $0009 $000A $000B $000C $000D HV CON HCNT L HCNT...freq. Calculating INTV ? Yes Delay 31 ms Delay 60ms Yes HCNTH = '00' ? No Yes VCNTOV = '1' ? No S...
Description	8-Bit Microcontroller for Monitor
File Size	450.95K / 44 Page	View it Online	Download Datasheet

For w freq Found Datasheets File :: 10282 Search Time::1.359ms
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