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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW4N60
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| OCR Text |
...us drain current (@t c =25 o c) 4.0 4.0* a continuous drain current (@t c =100 o c) 2.5 2.5* a i dm drain current pulsed ...4a, r g =25 ? (note 4,5) - 12 30 ns tr rising time - 30 80 t d(off) turn off delay time - 93 150 t ... |
| Description |
N-channel MOSFET
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| File Size |
347.00K /
5 Page |
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it Online |
Download Datasheet
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW4N60K
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| OCR Text |
4.0 features high ruggedness r ds( on ) (max 1.15 ? )@v gs =10v gate charge ( typ 13nc) improved dv/dt capabili...4a r ds(on) : 1.15 ? 1 2 3 1. gate 2. drain 3. source to - 251 sw4n60k samwin ... |
| Description |
N-channel TO-220F/I-PAK/D-PAK MOSFET
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| File Size |
639.25K /
6 Page |
View
it Online |
Download Datasheet |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW4N60B
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| OCR Text |
... drain current (@t c =25 o c) 4* a continuous drain current (@t c =100 o c) 2.5* a i dm drain current pulsed ...4a r ds(on) : 2.5 ? sw4n60b samwin 1 2 3 order codes item sales type marking... |
| Description |
N-channel I-PAK/D-PAK/TO-220F MOSFET
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| File Size |
904.35K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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