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Infineon
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Part No. |
50N60T
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OCR Text |
...5 soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1 j-std-020 and jesd-022 2) value limited by bond wire 3) allowed number ...50a i c =100a i c =25a v ge , gate-emitter voltage t j , junction temperature figure 7 . typical tra... |
Description |
IKW50N60T
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File Size |
594.75K /
13 Page |
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it Online |
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KIA
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Part No. |
50N06
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OCR Text |
... derating factor above 25 ocp d 0.9w/ oc operating junction temperaturet j - 55 ~ +150oc storage temperaturet stg - 55 ~ +150oc no...50a (note4,5) v gs =0v,i s = 50a integral reverse p - n junction d... |
Description |
three-terminal silicon device
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File Size |
849.82K /
9 Page |
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it Online |
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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Part No. |
FG4000CX-90DA
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OCR Text |
...CONNECTOR (RED) 3.5 DEPTH 2.2 0.2 CATHODE TYPE NAME
q ITQRM Repetitive controllable on-state current ...........4000A q IT(AV) Average ...50A/s VRG = 17V, CS = 5.0F, LS = 0.2H DC METHOD : VD = 24V, RL = 0.1, Tj = 25C Junction to fin Min -... |
Description |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
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File Size |
69.15K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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Part No. |
FS50SMJ-06
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OCR Text |
...imensions in mm
4.5 1.5 r
5.0
f 3.2
2
2
4
20.0
19.5MIN.
4.4
G
0.6 2.8
1.0 q 5.45 w e 5.45
4 wr
4V DRIVE VD...50A Integrated Fast Recovery Diode (TYP.) ............ 70ns
q
q GATE w DRAIN e SOURCE r DRAIN ... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
46.74K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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