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Alpha & Omega Semiconductor...
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Part No. |
AOB416 AOB416-09
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OCR Text |
...ation b p d avalanche energy l=0.1mh c t c =25c 6.2 5.0 a i dsm a drain-source voltage 100 the aob416 is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding effici... |
Description |
100V N-Channel MOSFET
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File Size |
270.74K /
7 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor...
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Part No. |
AO4454
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OCR Text |
...ation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a soic-8 top view ... |
Description |
100V N-Channel MOSFET
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File Size |
276.53K /
6 Page |
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it Online |
Download Datasheet |
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Silikron Semiconductor ...
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Part No. |
SSF2637E
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OCR Text |
... with gate voltages as low as -0.5v. schematic diagram battery protection load switch power management markin g and p in assi g nment sop-8 to p view ddd g s s s 4 321 d 567 8 4414 2637e package marking and ordering informa... |
Description |
High Power and current handing capability
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File Size |
277.41K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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