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  0.90m Datasheet PDF File

For 0.90m Found Datasheets File :: 489    Search Time::1.188ms    
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    Amphenol, Corp.
SYNC-POWER[SYNC POWER Crop.]
Part No. SPP4953S8TG SPP4953 SPP4953S8RG
OCR Text ... V V A A A W /W -6.2 -4.0 -30 -2.3 2.8 1.8 -55/150 -55/150 70 2006/10/16 Ver.1 Page 2 SPP4953 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Static Drain-Source Br...
Description P-Channel Enhancement Mode MOSFET P沟道增强型MOS

File Size 213.45K  /  8 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM2832CY TSM2832
OCR Text ... o Limit 20V 8 3.6 10 1.5 1.0 Unit V V A A W PD Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperat...
Description 20V N-Channel Enhancement Mode MOSFET

File Size 166.77K  /  5 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM3442CX6 TSM3442
OCR Text ...PD Limit 20V 8 3.6 10 1.5 1.0 Unit V V A A W Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 - 55 to +150 o o C C Thermal Performance Parameter Lead Temperature (1...
Description 20V N-Channel Enhancement Mode MOSFET

File Size 164.33K  /  3 Page

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    Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM4405P
OCR Text ... Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.21mm of PCB area 2 Less than 30% of the area of a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram ...
Description Single P-Channel 1.8V Specified MicroSURF MOSFET

File Size 179.75K  /  6 Page

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    UTC[Unisonic Technologies]
Part No. US104S
OCR Text ... 600 800 4 2.5 33 30 4.5 50 1.2 0.2 -40 ~ +150 -40 ~ +125 UNIT V A A A AS A/s A W C C UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTIC...90m Tj=Tjmax. 1.0 Tj=25 0.1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 UTC assumes no responsibil...
Description SCRs

File Size 189.70K  /  4 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. VNQ690SPTR-E VNQ690SP-E
OCR Text ...R=1.5K; C=100pF) - INPUT 41 -0.3 Internally limited -15 +/- 10 +/- 10 -200 4000 4000 5000 5000 78 53 -40 to 150 -65 to 150 V V A A mA mA mA V V V V W mJ C C -VCC IOUT IR IIN ISTAT IGND VESD - STATUS - OUTPUT - VCC Ptot EMA...
Description QUAD CHANNEL HIGH SIDE DRIVER

File Size 185.32K  /  20 Page

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    VITESSE[Vitesse Semiconductor Corporation]
Part No. VSC7958X VSC7958 VSC7958CC
OCR Text ... - + VBF VBS G52184-0, Rev 3.0 05/14/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (8...90m x 90m This device requires external components when used in die form. Please contact your Vit...
Description 2.5Gb/s High Speed Limiting Post Amplifier for OC-48/SDH-16 Applications

File Size 66.31K  /  8 Page

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    WEITRON[Weitron Technology]
Part No. WT2310
OCR Text ... Value 60 Unit V 20 3.0 2.3 10 1.38 90 -55~+150 W /W A Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WT2310=2310 http:www.weitron.com.tw WEITRON 1/6 05-May-05 WT2310 Electrical...
Description N-Channel Enhancement Mode Power MOSFET

File Size 617.40K  /  6 Page

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    WEITRON[Weitron Technology]
Part No. WTD9575
OCR Text ...in-Source Breakdown Voltage VGS=0,ID=-250A Gate-Source Threshold Voltage VDS=VGS,ID=-250A Gate-Source Leakage current VGS=25V Drain-SourceLeakage Current(Tj=25C) VDS=-60V,VGS=0 Drain-SourceLeakage Current(Tj=70C) VDS=-48V,VGS=0 Drain-Source...
Description Surface Mount P-Channel Enhancement Mode POWER MOSFET

File Size 398.20K  /  6 Page

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    WEITRON[Weitron Technology]
Part No. WTK9435
OCR Text ...S (th) IGSS IDSS Min -30 -1.0 - Typ - Max -3.0 100 -1 -5 55 90 Unit V V nA A Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-...
Description Surface Mount P-Channel Enhancement Mode MOSFET

File Size 1,390.83K  /  6 Page

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For 0.90m Found Datasheets File :: 489    Search Time::1.188ms    
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