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NTE[NTE Electronics]
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| Part No. |
NTE2362 NTE2361
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| OCR Text |
.... . . . . . . -55 to +150C Note 1. For PNP device (NTE2362), voltage and current values are negative. Electrical Characteristics: (TC = +25C...40Vdc, IE = 0 VBE = 4Vdc VCE = 5V, IC = 10mA VCE = 10V, IC = 50mA NTE2361 NTE2362 Min - - 200 - - Ty... |
| Description |
Silicon Complementary Transistors High Speed Switch
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| File Size |
21.92K /
2 Page |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK613H MSK613
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| OCR Text |
...Driver Automatic Test Equipment 1 2 3 4 5 6 7 8 9
PIN-OUT INFORMATION
N/C COMP N/C +VCC N/C N/C CASE GND GND N/C
1
10 11 12 13 14 15...40VDC. Unbalanced power supply rails are also allowed as long as one or the other is not decreased t... |
| Description |
HIGH VOLTAGE/HIGH SPEED SURFACE MOUNT AMPLIFIER
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| File Size |
145.82K /
4 Page |
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SavantIC
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| Part No. |
MJ15001
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| OCR Text |
...cations PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATI...40Vdc,t=1s, Nonrepetitive Is/b Second breakdown collector current With base forward biased VCE=100Vd... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
138.55K /
3 Page |
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it Online |
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SavantIC
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| Part No. |
MJ15002
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| OCR Text |
...cations PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATI...40Vdc,t=1 s, Nonrepetitive
-140
V
VCE(sat) VBE ICEO ICEX IEBO hFE
Collector-emitter satu... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
138.94K /
3 Page |
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it Online |
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Price and Availability
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