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1.091 Datasheet PDF File

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				Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BCP53T1
OCR Text	...t applications. * High Current: 1.5 Amps * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. The formed le...091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 SOT-223 Motorola Small...
Description	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
File Size	99.41K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBR521LT1 MRF5211LT1
OCR Text	...11LT1) * Low Noise Figure @ f = 1.0 GHz -- NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) * High Power Gain...091 0.130 0.188 0.261 0.343 0.426 0.503 0.568 0.620 0.032 0.050 0.061 0.076 0.092 0.100 0.150 0.208 ...
Description	HIGH-FREQUENCY TRANSISTOR PNP SILICON
File Size	151.95K / 8 Page	View it Online	Download Datasheet

				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	PZT751T1 ON2781 PZT751T1_D PZT751T3
OCR Text	...s PZT651T1 COLLECTOR 2, 4 BASE 1 PZT751T1 Motorola Preferred Device SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUN...091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.091 2.3 0.248 6.3 0.059 1.5 inches mm SOT-223...
Description	2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT From old datasheet system
File Size	119.34K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC4227 2SC4227NE68130 2SC4227-T1
OCR Text	...GE DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 FEATURES * Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VC...091 .097 .100 .112 .115 .124 .131 .138 .149 .156 .162 .177 .183 S12 ANG 79.9 65.1 55.0 58.5 56.4 54....
Description	Silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 离散
File Size	49.42K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text	...E DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 2 3 +0.1 0.3 -0 FEATURES * High fT * Low Cre * Hi...091 2.857 2.764 2.624 S21 ANG 161.1 145.1 133.6 123.6 115.7 108.9 104.8 99.5 95.5 92.0 88.8 85.3 83....
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	47.68K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BCP69T1 ON0174
OCR Text	...ications. * High Current: IC = -1.0 Amp * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting...091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.091 2.3 0.248 6.3 0.059 1.5 inches mm SOT-223...
Description	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT From old datasheet system
File Size	69.93K / 4 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	BUL66A
OCR Text	...SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0....
Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
File Size	19.37K / 2 Page	View it Online	Download Datasheet

				ELANTEC[Elantec Semiconductor]
Part No.	EL2030 EL2030C EL2030CM EL2030CN
OCR Text	1 b 3 dB bandwidth e 110 MHz AV e 2 0 01% differential gain and 0 01 differential phase (NTSC PAL) 0 05% differential gain and 0 02 diffe...091 Note All information contained in this data sheet has been carefully checked and is believed ...
Description	120 MHz Current Feedback Amplifier
File Size	392.57K / 16 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA76413DK8T HUFA76413D
OCR Text	... D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS...091 3 0.049 0.056 0.106 V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd I...
Description	Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз
File Size	207.51K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text	...900V RDS(on) = 8.0 G ID = 1.7A S Description Third generation HEXFETs from international Rectifier provide the designer with the ...091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( ...
Description	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 8.0ohm，身份证\u003d 1.7A 900V Single N-Channel HEXFET Power MOSFET in a TO-262 package 900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	307.93K / 10 Page	View it Online	Download Datasheet

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