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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LFLL APT50M75B2FLL APT50M75B2FLL_04 APT50M75B2FLL04
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| OCR Text |
...
MAX
UNIT pF
5590 1180 85 125 33 65 8 19 21 3 755 725 1240 845
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 ... |
| Description |
POWER MOS 7 FREDFET POWER MOS 7 R FREDFET
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| File Size |
163.79K /
5 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12045L2VFR
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| OCR Text |
...TANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
25
-2...500
Coss Crss
10mS 100
1
1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIG... |
| Description |
MOSFET POWER MOS V
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| File Size |
125.27K /
4 Page |
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ST Microelectronics
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| Part No. |
74LX1G70CTR 74LX1G70STR
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| OCR Text |
...0 to VCC 32 24 16 8 4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA mA C ns/V
1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V t...500 500 500 500
2.0 2.0 2.5 2.5 2.5
ns
CAPACITANCE CHARACTERISTICS
Test Condition Symbol P... |
| Description |
LOW VOLTAGE SINGLE BUFFER
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| File Size |
199.08K /
10 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12040JVR
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| OCR Text |
...
25 20 15 10 5 0
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOUR...500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
... |
| Description |
POWER MOS V 1200V 26A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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| File Size |
207.00K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12040JVFR
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| OCR Text |
...
25 20 15 10 5 0
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOUR...500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
... |
| Description |
MOSFET POWER MOS V FREDFET
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| File Size |
121.78K /
4 Page |
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Bourns Inc.
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| Part No. |
7914J-1-000E 7914J-1-024E 7914J-1-032E
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| OCR Text |
.........................-55 C to +125 C Storage Temperature Range ....................................-55 C to +125 C Seal Test .................500 pcs./reel; 50 pcs./tube S..................200 pcs./reel; 100 pcs./tube H ......................... |
| Description |
4 mm SMD & Through-hole Sealed Key Switch
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| File Size |
246.70K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R6SVFR APT1201R6BVFR
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| OCR Text |
...MIN TYP MAX UNIT pF
3050 255 125 155 15 78 12 10 50 15
3660 360 190 230 23 115 24 20 75 30
ns nC
Gate-Source Charge Gate-Drain ("M...500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
2 4V 0 3 ... |
| Description |
MOSFET POWER MOS V FREDFET
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| File Size |
113.48K /
4 Page |
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SamHop Microelectronics
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| Part No. |
STU25L01
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| OCR Text |
....6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 ...500 vds=50v,id=1a vgs=10v 60 6 dc 100us 10m s 1m s 0 5 r d s (on ) limit v gs =10v single pulse t a ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
89.30K /
7 Page |
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it Online |
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