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  14.1mm Datasheet PDF File

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    FDC6308P

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FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6308P
OCR Text ... VGS = -4.5 V, RGEN = 6 6 9 14 3 12 18 25 9 5 ns ns ns ns nC nC nC VDS = -10 V, ID = -1.7 A VGS = -4.5 V 3 0.7 0.8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forwa...
Description Dual P-Channel 2.5V Specified PowerTrench?/a> MOSFET
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET

File Size 317.55K  /  8 Page

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    HA22033

HITACHI[Hitachi Semiconductor]
Part No. HA22033
OCR Text ... typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5) Outline MPAK-5 ...1mm Front Side view of Part Layout(1.5GHz) HA22033 Main Characteristics Power Gain vs. Frequ...
Description GaAs MMIC Low Noise Amplifier for Micro Wave Application

File Size 43.33K  /  12 Page

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    IES020YG-A IES020ZG-A GY020SEI IES013ZE-A

POWER-ONE[Power-One]
Part No. IES020YG-A IES020ZG-A GY020SEI IES013ZE-A
OCR Text ... C/W 6.4 C/W Open Frame Modules 14.9 C/W 11.3 C/W 8.3 C/W 6.8 C/W 5.4 C/W Pin 1 2 3 4 5 6 7 8 9 Function +Vin -Vin No Pin Shutdown +...1mm) Horizontal Heatsink 0.24" (6.1mm) Vertical Heatsink 0.45" (11.4mm) Horizontal Heatsink 0.45" (1...
Description IES SERIES 20 WATT

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    IRF7601 IRF7601TR

International Rectifier, Corp.
Part No. IRF7601 IRF7601TR
OCR Text ...e Range Max. 5.7 4.6 30 1.8 14 12 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 70 Units C/W All Micro8 Data Sheets reflect improved Ther...
Description 20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管)
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)

File Size 110.37K  /  8 Page

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    IRF7603

International Rectifier
Part No. IRF7603
OCR Text ...e Range Max. 5.6 4.5 30 1.8 14 20 5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 70 Units C/W All Micro8 Data Sheets reflect improved Ther...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

File Size 107.39K  /  8 Page

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    IRF7604

International Rectifier
Part No. IRF7604
OCR Text ...ange Max. -3.6 -2.9 -19 1.8 14 12 -5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 70 Units C/W All Micro8 Data Sheets reflect improved The...
Description Power MOSFET(Vdss=-20V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

File Size 130.78K  /  8 Page

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    IRF7606

International Rectifier
Part No. IRF7606
OCR Text ...ange Max. -3.6 -2.9 -19 1.8 14 20 -5.0 -55 to + 150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 70 Units C/W All Micro8 Data Sheets reflect impr...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)

File Size 95.99K  /  8 Page

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    IRF7607

International Rectifier
Part No. IRF7607
OCR Text ... E R A N C IN G P E R A N S I Y 14 .5M -1 982 . 2 C O N TR O LL IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Micro8TM Part Marking Information EX AM PLE : T H IS...
Description Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

File Size 73.66K  /  8 Page

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    L4962E L4962EH L4962A

ST Microelectronics
STMicroelectronics
Part No. L4962E L4962EH L4962A
OCR Text ... pin 10 Pin 11 sink current Pin 14 source current Power dissipation at Tpins 90C (Powerdip) Tcase 90C (Heptawatt) Junction and storage tem...1mm, AIR GAP 0.8mm (20 AWG) - COGEMA 969051. Figure 26. P.C. board and component layout of the ci...
Description 1.5A POWER SWITCHING REGULATOR

File Size 197.77K  /  16 Page

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    M65830 M65830BP M65830FP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M65830 M65830BP M65830FP
OCR Text ...8 9 20 OP1 IN 19 18 17 16 15 14 13 REF CC1 CC2 OP2 IN OP2 OUT LPF2 IN LPF2 OUT TEST2 10 D-GND 11 A-GND 12 Outline 24P4 (BP) 24P2W-A (BFP) MITSUBISHI ELECTRIC ice Not param e som L n a fi ub P R EThis isic olitmits are s ; ...
Description DIGITAL DELAY

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