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  17.32 Datasheet PDF File

For 17.32 Found Datasheets File :: 127348    Search Time::1.86ms    
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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...AX. CURRENT () (mA) 0.15 0.16 0.17 0.19 0.21 0.24 0.28 0.32 0.36 0.41 0.47 0.24 0.24 0.27 0.30 0.32 0.35 0.35 0.35 0.37 0.39 0.43 0.48 0.52 0.58 0.63 0.72 0.77 0.84 0.94 1.03 1.12 1.22 1.34 1.47 1.62 1.80 3.7 4.2 4.6 5.1 5.8 6.4 7.0 7.7 8.5...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...ts C/W www.irf.com 1 01/17/02 IRF3710 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...- Typ. --- 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V --- VGS = 4...32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... n t (A ) 100 100 s T J = 17 5C T J = 25 C 10 1m s 10 10m s 1 0.4 0.6 0.8 1.0 1.2 1.4 VG S = 0 V 1.6 A 1 1 T C = 2...32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5....
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... n t (A ) 100 100 s T J = 17 5C T J = 25 C 10 1m s 10 10m s 1 0.4 0.6 0.8 1.0 1.2 1.4 VG S = 0 V 1.6 A 1 1 T C = 2 5C T J = 1 75C Sin gle Pu lse 10 100 1.8 A -VS D , S ource-to-Drain V oltage (V ) -VD ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...V 20 s P U L S E W ID T H TC = 17 5C J 0.1 1 10 1 1 A 100 -VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S o...32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...10 V Min. Typ. 11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-dr...32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...10 V Min. Typ. 11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Time Reverse Charge Reverse Cur...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...tput Capacitance A nA 100 17 14 3.4 1.6 5.1 6.7 8.1 2.2 8.6 21 43 10 1801 723 46 - - - 12 26 21 nC VDS = 16V, VGS = 0 VDD = 16V...32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...ss Coss - - - 61 55 14 3.5 13.5 17 25 1.1 19 9 32 12 7300 900 350 - - - - - - 22.5 30 100 75 73 19 17 2.7 1.3 4.5 5.8 26 1.8 8 4 16 8 1800 900 60 - - - pF VDS = 16V, VGS = 0 ns 7.0 31 VDD = 16V, ID = 15A VGS = 5V Clamped Inductive Load VDS...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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