| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQAF8N80
|
| OCR Text |
...* * * * * 5.9A, 800V, RDS(on) = 1.2 @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tes...8mH, IAS = 5.9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.4A, di/dt 200A/s, VDD BVDSS, Sta... |
| Description |
800V N-Channel MOSFET
|
| File Size |
687.73K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQAF9N90 FQA7N90M
|
| OCR Text |
...* * * * * 5.9A, 900V, RDS(on) = 1.3 @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tes...8mH, IAS = 5.9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.6A, di/dt 200A/s, VDD BVDSS, Sta... |
| Description |
900V N-Channel MOSFET
|
| File Size |
677.00K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
http://
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQI12N50 FQB12N50 FQB12N50TMAM002
|
| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQB12N50 / FQI12N50 500 12.1 7.6 48.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A...8mH, IAS = 12.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 12.1A, di/dt 200A/s, VDD BVDSS, S... |
| Description |
500V N-Channel MOSFET 12.1 A, 500 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET
500V N-Channel QFET
|
| File Size |
614.43K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQI19N20C FQB19N20C FQB19N20CTM
|
| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQB19N20C / FQI19N20C 200 19.0 12.1 76.0 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V m...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 19.0A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
| File Size |
873.32K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQP9P25
|
| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQP9P25 -250 -9.4 -5.9 -37.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns ...8mH, IAS = -9.4A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -9.4A, di/dt 300A/s, VDD BVDSS, ... |
| Description |
250V P-Channel MOSFET
|
| File Size |
562.27K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQPF12P20 FQPF12P20YDTU
|
| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQPF12P20 -200 -7.3 -4.6 -29.2 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/n...8mH, IAS = -7.3A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -11.5A, di/dt 300A/s, VDD BVDSS,... |
| Description |
200V P-Channel MOSFET
|
| File Size |
629.72K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| Part No. |
FQPF19N10L
|
| OCR Text |
... * * * 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche teste...8mH, IAS = 13.6A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
100V LOGIC N-Channel MOSFET 13.6 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
613.83K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQPF19N10
|
| OCR Text |
... * * * 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche teste...8mH, IAS = 13.6A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
100V N-Channel MOSFET
|
| File Size |
581.31K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQPF19N20C FQP19N20C FQP19N20CTSTU
|
| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQP19N20C 19.0 12.1 76.0
FQPF19N20C 200 19.0 * 12.1 * 76.0 * 30 433
Units V A A A V mJ A mJ V/n...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 19.0A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
| File Size |
1,141.02K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FQPF5P10
|
| OCR Text |
...* * * * -2.9A, -100V, RDS(on) = 1.05 @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche ...8mH, IAS = -2.9A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -4.5A, di/dt 300A/s, VDD BVDSS, ... |
| Description |
100V P-Channel MOSFET
|
| File Size |
658.67K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
