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Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N MRF6S19060NR108
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OCR Text |
...s with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier... |
Description |
RF Power Field Effect Transistors
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File Size |
605.95K /
16 Page |
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Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF6S19140HSR3 MRF6S19140HR3
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OCR Text |
...s with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts,... |
Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
394.12K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07
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OCR Text |
...s with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts,... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
400.35K /
11 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF7S19080HSR3 MRF7S19080HR3
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OCR Text |
...s with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications. * Typical Single - Carrier W - CDMA Performanc... |
Description |
RF Power Field Effect Transistors
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File Size |
633.44K /
16 Page |
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it Online |
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
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Part No. |
MW5IC2030MBR1 MW5IC2030GMBR1
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OCR Text |
...gn makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, ID... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
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File Size |
621.66K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MW5IC2030NBR1 MW5IC2030GNBR1
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OCR Text |
...at makes it usable from 1930 to 1990 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical CDMA Performance: VDD = 27 Volts, IDQ1 ... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
474.48K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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OCR Text |
...gn makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application * Typical Two - Tone Performance: VDD = ... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
1,114.00K /
28 Page |
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it Online |
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Price and Availability
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