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  1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386    Search Time::1.594ms    
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    K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL

File Size 130.19K  /  11 Page

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    K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

File Size 59.61K  /  11 Page

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    K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description From old datasheet system
IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP

File Size 58.25K  /  8 Page

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    K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

File Size 111.69K  /  12 Page

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    K4S56163LC K4S56163LC-RF

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S56163LC K4S56163LC-RF
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 16Mx16 Mobile SDRAM 54CSP
CAP 680UF 50V ELECT FM RADIAL

File Size 59.21K  /  8 Page

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    M12L32162A M12L32162A-7BG M12L32162A-7TG

Elite Semiconductor Memory Technology Inc.
Part No. M12L32162A M12L32162A-7BG M12L32162A-7TG
OCR Text ...lock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3.Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns sho...
Description 1M x 16Bit x 2Banks Synchronous DRAM

File Size 699.68K  /  29 Page

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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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    MAX9150 MAX9150EUI 2351

Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
Part No. MAX9150 MAX9150EUI 2351
OCR Text ..., 50% duty cycle, RO = 50, tR = 1ns, and tF = 1ns (0% to 100%). Note 6: Signal generator conditions for tJPP: VOD = 200mV, VOS = 1.2V, frequency = 200MHz, 50% duty cycle, RO = 50, tR = 1ns, and tF = 1ns (0% to 100%. tJPP includes pulse (dut...
Description RES 0.51-OHM 1% 1W 200PPM THK-FILM SMD-2512 TR-7-PL 低抖动0端口LVDS转发
From old datasheet system
Low-Jitter, 10-Port LVDS Repeater
Low-Jitter / 10-Port LVDS Repeater

File Size 201.67K  /  10 Page

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    M52S32162A M52S32162A-10BG M52S32162A-10TG M52S32162A-7.5BG M52S32162A-7.5TG

Elite Semiconductor Memory Technology Inc.
Part No. M52S32162A M52S32162A-10BG M52S32162A-10TG M52S32162A-7.5BG M52S32162A-7.5TG
OCR Text ...dify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns) M52S32162A Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2007 Revision : 1.2 1/30 ESMT SDRAM M52S32162A 1M x 16Bit x 2Banks Synchronous DRAM FEATURES 2.5...
Description 1M x 16Bit x 2Banks Synchronous DRAM

File Size 768.08K  /  30 Page

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    M12S128168A M12S128168A-10TG

Elite Semiconductor Memory Technology Inc.
Part No. M12S128168A M12S128168A-10TG
OCR Text ...lock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered. 3. Assumed input rise and fall time (tr & tf) =1ns. If tr & tf is longer than 1ns. transient time compensation should be considered. i.e., [(tr + tf)/2 - 1] ns shoul...
Description 2M x 16 Bit x 4 Banks Synchronous DRAM

File Size 945.36K  /  44 Page

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For 1ns Found Datasheets File :: 2386    Search Time::1.594ms    
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