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Hitachi
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Part No. |
MBM200JS12AW
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OCR Text |
...oltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 21,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W Switching Times Fall Time tf 0.25 0.35 RG=6.2W (4) 0.55 1.0 VGE=15V Turn Off T... |
Description |
IGBT POWER MODULE
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File Size |
96.62K /
4 Page |
View
it Online |
Download Datasheet |
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Sanyo
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Part No. |
GMA02 1359
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OCR Text |
...very Time Symbol VF IR C trr IF=200mA VR=220V VR=0V, f=1MHz IF=IR=20mA, RL=50 Conditions Ratings min typ max 1.5 10 3.0 75 Unit V A pF ns
trr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tok... |
Description |
Silicon Epitaxial Planar Type Very High-Speed Switching Diode From old datasheet system
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File Size |
33.82K /
2 Page |
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it Online |
Download Datasheet |
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ROHM[Rohm]
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Part No. |
RLS245
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OCR Text |
.... 1.5 10 3 75 Unit V A pF ns IF=200mA VR=220V VR=0V, f=1MHz IF=20mA, IR =20mA, RL=50 Conditions
RLS245
Diodes
!Electrical characteristic curves (Ta=25C)
200 100
10
50 20 10 5 2 1 0.5 0.2 0
CAPACITANCE BETWEEN TERMINALS : CT (... |
Description |
Switching diode
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File Size |
54.78K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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