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  3-28v Datasheet PDF File

For 3-28v Found Datasheets File :: 6784    Search Time::2.281ms    
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    MA-Com
Part No. DU2880T
OCR Text ...i 100 s 5 80 e f$ 60 b 3 40 2 20 0 1 0.1 0.2 0.3 1 2 3 4 5 power input(w) gain vs frequency 25 i v,,=28 v i,...28v du2880t v2.00 typical device impedance frequency (mhz) 30 50 100 175 z,, (ohms) z ...
Description 2-175 MHz, 80W, 28V, RF MOSFET power transistor

File Size 191.99K  /  3 Page

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    NTE311

NTE[NTE Electronics]
Part No. NTE311
OCR Text .... . . . . . . . . . . . . . . . 3.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...28V, POUT = 1W, f = 400MHz VCC = 20V, POUT = 1W, f = 400MHz 10 45 - - - - dB % fT Cobo IC = 50mA, VC...
Description Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF

File Size 20.30K  /  2 Page

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    MA-Com
Part No. DU2860T
OCR Text ... 0 0.5 1 1.5 2 2.5 2.75 3 power input(w) specifications subject to change wiiout notice. mia-com, inc. north america: t...28v typical device impedance frequency (mhz) 30 50 100 200 z,, (ohms) z load (ohms) 9...
Description 2-175 MHz, 60W, 28V, RF MOSFET power transistor

File Size 174.26K  /  3 Page

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    MA-Com
Part No. DU28120T
OCR Text ...h 10s x33 200 2lo 1 j 1 3.05 i 3.30 i d20 1 .lr) i electrical characteristics at 25c n .lo .ls input capacitance ou...28v du28120t v2.00 typical broadband performance curves 30 is s g 20 s 10 gain vs fr...
Description 2-175 MHz, 120W, 28V, RF MOSFET power transistor

File Size 176.40K  /  3 Page

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    BLF7G24L-160P BLF7G24LS-160P

NXP Semiconductors
Part No. BLF7G24L-160P BLF7G24LS-160P
OCR Text ... hazardous substances (rohs) 1.3 applications ? rf power amplifiers fo r base stations and multi carrier applications in the 2300 mhz to 2...28v; i dq = 1200 ma; p l = 160 w; f = 2300 mhz. table 5. thermal characteristics symbol parameter co...
Description Power LDMOS transistor

File Size 337.39K  /  14 Page

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    BLF7G22L-200 BLF7G22LS-200

NXP Semiconductors
Part No. BLF7G22L-200 BLF7G22LS-200
OCR Text ... hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2110 ...28v; i dq = 1620 ma 0.26 k/w blf7g22l-200_7g22ls-200 all information provided in this document is ...
Description Power LDMOS transistor

File Size 150.43K  /  13 Page

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    BLF7G22L-100P

NXP Semiconductors
Part No. BLF7G22L-100P
OCR Text ... hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2000 ...28v; i dq =720ma; p l = 100 w (cw); f = 2110 mhz. table 5. thermal characteristics symbol parameter ...
Description Power LDMOS transistor

File Size 670.01K  /  14 Page

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    BLF7G20L-250P-15

NXP Semiconductors
Part No. BLF7G20L-250P-15
OCR Text ...s (rohs) directive 2002/95/ec 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multicarrier applications in the 1805 mh...28v; i dq = 1900 ma; p l(1db) = 245 w (cw); f = 1805 mhz to 1880 mhz. table 5. thermal characterist...
Description Power LDMOS transistor

File Size 427.36K  /  15 Page

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