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				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FSAM20SH60A
OCR Text	...ertified No. E209204 * 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection * Divided negative dc-lin...5) IN(WL) (6) com(L) (7) FO (8) CFOD (9) CSC (10) RSC (11) IN(UH) (12) VCC(UH) (13) VB(U) (14) VS(U)...
Description	16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor SPMTM (Smart Power Module)
File Size	971.53K / 17 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FSAM20SL60
OCR Text	...ertified No. E209204 * 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection * Divided negative dc-lin...5) IN(WL) (6) com(L) (7) FO (8) CFOD (9) CSC (10) RSC (11) IN(UH) (12) VCC(UH) (13) VB(U) (14) VS(U)...
Description	SPMTM (Smart Power Module)
File Size	2,355.81K / 16 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	FSAM20SM60A
OCR Text	...ertified No. E209204 * 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection * Divided negative dc-lin...5) IN(WL) (6) com(L) (7) FO (8) CFOD (9) CSC (10) RSC (11) IN(UH) (12) VCC(UH) (13) VB(U) (14) VS(U)...
Description	20A, Smart Power Module (SPM) SPMTM (Smart Power Module)
File Size	2,335.38K / 16 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HD44H11
OCR Text	3 HD44H11 NPN EPITAXIAL PLANAR TRANSISTOR Description The HD44H11 is designed for various specific and general purpose applications,...5 V IC Collector Current...............................................................................
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	30.73K / 3 Page	View it Online	Download Datasheet

				HSMC Hi-Sincerity Mocroelectronics
Part No.	HMBT8550
OCR Text	3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features * ...5 V IC Collector Current ..............................................................................
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	29.36K / 3 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC273MS10G
OCR Text	3.7 GHz Features 1 dB LSB Steps to 31 dB Single Positive Control Per BIT +/- 0.5 dB Typical Bit Error Miniature MSOP 10 Package: 14.8mm2 Typical Applications The HMC273MS10G is ideal for: 9 ATTENUATORS - SMT * Cellular * PCS, I...
Description	1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz
File Size	184.64K / 6 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HTIP41C
OCR Text	3 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching app...5 2 75 Unit V V uA uA mA V V Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, IB=0 VCE=60V, IB=0...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	32.63K / 3 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
OCR Text	... pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,...5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 ...
Description	SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
OCR Text	... pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,...5/55/6/7 HY57V641620HGT-K HY57V641620HGT-H HY57V641620HGT-8 HY57V641620HGT-P HY57V641620HGT-S HY57V6...
Description	4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...EATURES * * * * JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key ...5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 ...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

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