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  3.500mhz Datasheet PDF File

For 3.500mhz Found Datasheets File :: 4205    Search Time::4.094ms    
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    2N2484UB 2N2484UA JAN2N2484

Microsemi Corporation
Part No. 2N2484UB 2N2484UA JAN2N2484
OCR Text ... Symbol RJA Value 325 275 350 Unit C/W ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditi...0MHz IC = 500Adc, VCE = 5.0Vdc, f = 30MHz Open Circuit Output Admittance IC = 1.0mAdc, VCE = 5.0Vdc,...
Description NPN SILICON LOW POWER TRANSISTOR

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    Advanced Power Electron...
Part No. AP92U03GMT-HF-16
OCR Text ...transfer capacitance f=1.0mhz - 350 - pf r g gate resistance f=1.0mhz - 1.2 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =1...
Description SO-8 Compatible with Heatsink

File Size 48.55K  /  5 Page

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    Advanced Power Electron...
Part No. AP92U03GM-HF-16
OCR Text ...transfer capacitance f=1.0mhz - 350 - pf r g gate resistance f=1.0mhz - 1.2 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =...
Description Simple Drive Requirement

File Size 48.42K  /  5 Page

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    IRF2804S-7PPBF

International Rectifier
Part No. IRF2804S-7PPBF
OCR Text ... www.irf.com IRF2804S-7PPbF 350 300 ID , Drain Current (A) 2.0 250 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (C) RDS(on) , Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE ID = 160A VGS =...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 661.76K  /  11 Page

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    AP2322GN

Advanced Power Electronics Corp.
Part No. AP2322GN
OCR Text ...Typ. 0.02 2 7 0.7 2.5 6 12 16 4 350 55 48 3.2 Max. Units 90 120 150 1 1 100 11 560 4.8 V V/ m m m V S uA nA nC nC nC ns ns ns ns pF pF pF...0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller"...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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    NEL
Part No. HK-2910
OCR Text ...v. C Typical ----------------350 psec ----------------- Max 300.0MHz 55/45% VCC-1.60V VCC-0.74V 600 psec 5 psec 1.0V VCC +100ppm General Characteristics Parameter Supply Voltage Supply Current Symbol VCC ICC Conditions ----50 ohm ...
Description CRYSTAL CLOCK OSCILLATORS

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    MMDT41461 MMDT4146-7-F MMDT4146

DIODES[Diodes Incorporated]
Part No. MMDT41461 MMDT4146-7-F MMDT4146
OCR Text ...OBO, OUTPUT CAPACITANCE (pF) 350 PD, POWER DISSIPATION (mW) 10 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 1 0.1 1 10 ...
Description COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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    CMLM070510

Central Semiconductor Corp
Part No. CMLM070510
OCR Text ...EBO IC SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 90 60 6.0 600 40 500 3.5 10 UNITS mW C C/W UNITS V V V mA UNITS V mA A A SOT-563 CASE...0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC...
Description SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

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    CMLM0708A

Central Semiconductor Corp
Part No. CMLM0708A
OCR Text ... C C/W UNITS V V V mA mA A A 350 300 150 -65 to +150 357 P-Ch (Q2) 50 50 20 280 280 1.5 1.5 ELECTRICAL CHARACTERISTICS: (TA=25C unless...0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA RG=25, RL=150 N-Ch...
Description SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS

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