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Silan Microelectronics
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| Part No. |
SVD5N60AT
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| OCR Text |
...ote?3) -- 2.2 -- c notes: 1.? l=30mh,i as =4.4a,v dd =85v,r g =25 w ,starting?t j =25 c; 2.? repetitive?rating:?pulse?width?limited?by?maximum?junction?temperature; 3.? pulse?test:?pulse?width? |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
543.12K /
7 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
KA5Q0765RTHYDTU
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| OCR Text |
...mum junction temperature 3. l = 30mh, v dd = 50v, r g = 25 ? , starting t j = 25 c 4. l = 13uh, starting t j = 25 c parameter symbol value unit drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain cur... |
| Description |
28 A SWITCHING REGULATOR, PZFM5
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| File Size |
414.76K /
12 Page |
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ST Microelectronics
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| Part No. |
TDA2170
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| OCR Text |
.../ 24.6 mh 1.2 app 90 tvc 15 w /30mh 0.82 app unit rt1 10 4.7 10 k w r1 12 10 12 k w r2 10 5.6 5.6 k w r3 27 12 18 k w r4 12 8.2 5.6 k w r5 0.82 1 1 w r6 270 330 330 w r7 1.5 1.5 1.5 w d1 1n 4001 1n 4001 1n 4001 c1 0.1 0.1 0.1 m f c2 el. 1... |
| Description |
TV VERTICAL DEFLECTION OUTPUT CIRCUIT
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| File Size |
182.54K /
7 Page |
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SemiHow
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| Part No. |
SPGP0565A
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| OCR Text |
... junction temperature 2 . l=30mh, i as =5.0a , v dd =50v, r g =25 ? , starting t j =25 ? c semihow rev.plimilary january 2011 www.datasheet.net/ datasheet pdf - http://www.datasheet4u.co.kr/
s p electrical characteristics ( sense... |
| Description |
SEMIHOW POWER SWITCH
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| File Size |
505.67K /
8 Page |
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CUI INC
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| Part No. |
VSK-S5-5UA-T VSK-S5-24UA-T
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| OCR Text |
...400vac cx 0.22f/275vac lcm 10mh-30mh cy y capacitor, 102k/400v capacitors c1 1f ceramic capacitor c2 10f electrolytic capacitor figure 1
date 03/08/2013 page 5 of 5 cui inc series : vsk-s5-t description: ac-dc power sup... |
| Description |
AC-DC POWER SUPPLY
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| File Size |
304.84K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOTF6N90
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| OCR Text |
...es a single pulse ratin g. g. l=30mh, i as =3.3a, v dd =150v, r g =25 ? , starting t j =25c www.freescale.net.cn 2/5 aotf6n90 900v,6a n-channel mosfet
typical electrical and thermal characteristics 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+... |
| Description |
900V,6A N-Channel MOSFET
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| File Size |
363.18K /
5 Page |
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Tiger Electronic Co.,Ltd
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| Part No. |
SS8550
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| OCR Text |
... f t v ce =-10v, i c =-50ma,f=30mh z 100 mhz classification of h fe(2) rank b c d d3 range 85-160 120-200 160-300 300-400 to-92 1. emitter 2. base 3. collector b,sep,... |
| Description |
TO-92 Plastic-Encapsulate Transistors (PNP)
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| File Size |
590.29K /
2 Page |
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Pan Jit International
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| Part No. |
PJP4N60
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| OCR Text |
...le pulse i as =4.4a, vdd=85v, l=30mh e a s 3 3 0 m j jun ction-to-case thermal resistance r j c 1 .7 5 4 .8 o c / w junc tion-to ambient thermal resistance(pcb mounted) 2 r j a 6 2 . 5 1 0 0 o c / w
page . 2 march 31,2010-rev.00 pjp... |
| Description |
600V N-Channel Enhancement Mode MOSFET
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| File Size |
238.54K /
5 Page |
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it Online |
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