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For 32mbit Found Datasheets File :: 330 Search Time::1.078ms
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				Samsung semiconductor
Part No.	K4H510438D-UC/LA2 K4H510838D-UC/LA2 K4H511638D-UC/LB0 K4H510838D-UC/LCC K4H511638D-UC/LCC K4H510838D-UC/LB0 K4H510438D-UC/LB0 K4H511638D-UC/LA2 K4H510838D-UC/LB3 K4H511638D-UC/LB3
OCR Text	..............6 6.0 Block Diagram (32mbit x 4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks)............................................7 7.0 Input/Output Function Description ...............................................................................
Description	512Mb D-die DDR SDRAM Specification
File Size	361.82K / 24 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H511638D K4H510438D
OCR Text	..............6 6.0 Block Diagram (32mbit x 4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks)............................................7 7.0 Input/Output Function Description ...............................................................................
Description	(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
File Size	387.39K / 24 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H511638F
OCR Text	..............6 6.0 Block Diagram (32mbit x 4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks)............................................7 7.0 Input/Output Function Description ...............................................................................
Description	512Mb F-die DDR SDRAM Specification
File Size	397.07K / 24 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H511638G
OCR Text	..............6 6.0 Block Diagram (32mbit x 4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks)............................................7 7.0 Input/Output Function Description ...............................................................................
Description	512Mb G-die DDR SDRAM Specification
File Size	394.04K / 24 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYB18T512160AC-3.7 HYB18T512160AC-5 HYB18T512400AC-3.7 HYB18T512400AC-5 HYB18T512800AC-3.7 HYB18T512800AC-5
OCR Text	...2Mb chip is organized as either 32mbit x 4 I/O x 4 bank, 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device. These synchronous devices achieve high speed transfer rates of up to 667 Mb/sec/pin for general applications. The chip is de...
Description	DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04 DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04 DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04 DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 400 (3-3-3) Available 2Q04 DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04 DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 400 (3-3-3) Available 2Q04
File Size	1,221.92K / 90 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K5L2731CAM-D770
OCR Text	...es 128Mbit NOR Flash Memory and 32mbit Page UtRAM. The NOR Flash featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16. The memory architecture of the device is designed to divide its memory arrays into...
Description	128Mb NOR Flash 32Mb UtRAM
File Size	942.76K / 65 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4G323222A-QC/L45 K4G323222A-QC/L50 K4G323222A-QC/L70 K4G323222A-QC/L60 K4G323222A-QC/L7C K4G323222A-PC/L45 K4G323222A-PC/L50 K4G323222A-PC/L60 K4G323222A-PC/L70 K4G323222A-PC/L7C
OCR Text	32mbit SGRAM 512K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.3 December 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 (Dec. 2000) -1- K4G323222A Revis...
Description	512K x 32Bit x 2 Banks Synchronous Graphic RAM Data Sheet 32mbit SGRAM 32兆SGRAM
File Size	1,129.22K / 49 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3.7 HYB18T1G400AC-5 HYB18T1G800AC-3.7 HYB18T1G800AC-5
OCR Text	...1Gb chip is organized as either 32mbit x 4 I/O x 8 banks, 16Mbit x 8 I/O x 8 banks or 8Mbit x 16 I/O x 8 banks device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 667 Mb/sec/pin for general applicat...
Description	DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04 DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04 DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04 DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
File Size	1,238.68K / 95 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text	...8) Block Diagram (64Mbit x 4 / 32mbit x 8 I/O x 4 Banks) DDR SDRAM x4/8 LWE I/O Control CK, CK Data Input Register Serial to parallel LDM (x4x8) Bank Select x8/16 8Mx8/ 4Mx16 Output Buffer 2-bit prefetch Sense A...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K4T1G164QE K4T1G044QE K4T1G084QE
OCR Text	...Gb DDR2 SDRAM is organized as a 32mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general...
Description	1Gb E-die DDR2 SDRAM
File Size	1,070.34K / 45 Page	View it Online	Download Datasheet

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