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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFL014N
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OCR Text |
...--- --- --- --- --- --- --- --- 41 64 1.3 A 15 1.0 61 95 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode...11 )
ISD 1.7A, di/dt 250A/s, VDD V(BR)DSS,
TJ 150C
VDD = 25V, starting TJ = 25C, L = 8.... |
Description |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管) Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
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File Size |
140.28K /
8 Page |
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