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Fujitsu Limited
HIROSE ELECTRIC Co., Ltd.
Fujitsu, Ltd.
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| Part No. |
MB88347PF MB88347PFV
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| OCR Text |
...ss = gnd = 0.0 v i al = 500 a digital data = #00 v ss ? 0.2 v ss v ss + 0.2 v output minimum voltage 3 v aol3 v dd = v cc = 5.0 v v ss = gnd = 0.0 v i ah = 500 a digital data = #00 v ss ? v ss + 0.2 v... |
| Description |
R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS SERIAL INPUT LOADING, 8-BIT DAC, PDIP16
R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS SERIAL INPUT LOADING, 8-BIT DAC, PDSO16
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| File Size |
109.13K /
20 Page |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PBSS4540X
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| OCR Text |
...= 200 mA; note 1 IC = 5 A; IB = 500 mA; note 1
mV mV mV mV mV m V V V MHz pF
RCEsat VBEsat VBEon fT Cc Note
equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capaci... |
| Description |
40 V, 5 A NPN low VCEsat (BISS) transistor
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| File Size |
94.27K /
13 Page |
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it Online |
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Microsemi, Corp.
HITACHI[Hitachi Semiconductor]
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| Part No. |
2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D
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| OCR Text |
...- -- -- -- -- 350 1.6 -- -- 0.5 500 -- 0.75 0.2 -- -- V V Unit Test conditions V V A IC = 1 mA, RBE = IC = 10 A, IE = 0 VCB = 100 V, I E = ...MHz VCE = 12 V, IC = 5 mA pF VCB = 25 V, IE = 0, f = 1 MHz
Note:
1. The 2SD755, 2SD756 and 2SD... |
| Description |
Silicon NPN Transistor
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|2VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
Silicon NPN Epitaxial
SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN
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| File Size |
30.52K /
6 Page |
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it Online |
Download Datasheet |
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Z-Communications, Inc.
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| Part No. |
V674ME27
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| OCR Text |
... detail 'a' 0.475 0.000 0.025 0.500 0.415 0.315 0.215 0.090 0.200 0.285 0.385 0.500 0.090 0.215 0.315 0.415 0.420 0.320 0.475 0.500 0.000 0....mhz) power output (dbm) frequency (mhz)
... |
| Description |
VOLTAGE CONTROLLED OSCILLATOR
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| File Size |
87.03K /
2 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PBSS4350T
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| OCR Text |
...5 V IC = 100 mA; VCE = 2 V IC = 500 mA; VCE = 2 V IC = 1 A; VCE = 2 V; note 1 IC = 2 A; VCE = 2 V; note 1 IC = 3 A; VCE = 2 V; note 1 VCEsat...MHz IE = Ie = 0; VCB = 10 V; f = 1 MHz MIN. - - - - - - - - - - - - - 100 - - - - - TYP.
PBSS4350... |
| Description |
50 V; 3 A NPN low VCEsat (BISS) transistor
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| File Size |
76.55K /
10 Page |
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it Online |
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TOSHIBA
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| Part No. |
GT50G321
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| OCR Text |
...v ge = 25 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 400 v, v ge = 0 D D 1.0 ma gate-emitter cut-off volt...mhz D 3900 D pf rise time t r D 0.33 D turn-on time t on D 0.43 D fall time t f ... |
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
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| File Size |
148.13K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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