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    AAT4900 AAT4900IGV-T1

Advanced Analogic Technologies, Inc.
ANALOGICTECH[Advanced Analogic Technologies]
Part No. AAT4900 AAT4900IGV-T1
OCR Text ...e 310, Sunnyvale, CA 94086 (408)524-9684 Fax (408)524-9689 8-1 4900.2000.9.0.71 AAT4900 Buffered Power Half-Bridge Absolute Maximum Ratings (TA=25C unless otherwise noted) Symbol VIN VEN, VCLK VOUT IMAX TJ JA PD TLEAD IN to GND EN, C...
Description Buffered Power Half-Bridge

File Size 190.90K  /  4 Page

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    AT17LV002 AT17LV002-10BJC AT17LV002-10BJI AT17LV002-10CC AT17LV002-10CI AT17LV002-10JC AT17LV002-10JI AT17LV002-10NC AT1

ATMEL[ATMEL Corporation]
Part No. AT17LV002 AT17LV002-10BJC AT17LV002-10BJI AT17LV002-10CC AT17LV002-10CI AT17LV002-10JC AT17LV002-10JI AT17LV002-10NC AT17LV002-10NI AT17LV002-10PC AT17LV002-10PI AT17LV002-10SC AT17LV002-10SI AT17LV002-10TQC AT17LV002-10TQI AT17LV002A-10BJC AT17LV002A-10BJI AT17LV002A-10CC AT17LV002A-10CI AT17LV002A-10JC AT17LV002A-10JI AT17LV002A-10NC AT17LV002A-10NI AT17LV002A-10PC AT17LV002A-10PI AT17LV002A-10SC AT17LV002A-10SI AT17LV002A-10TQC AT17LV002A-10TQI AT17LV010-10BJC AT17LV010-10BJI AT17LV010-10CC AT17LV010-10CI AT17LV010-10NC AT17LV010-10NI AT17LV010-10PC AT17LV010-10PI AT17LV010-10SC AT17LV010-10SI AT17LV010-10TQC AT17LV010-10TQI AT17LV010A-10BJC AT17LV010A-10BJI AT17LV010A-10CC AT17LV010A-10CI AT17LV010A-10NC AT17LV010A-10NI AT17LV010A-10PC AT17LV010A-10PI AT17LV010A-10SC AT17LV010A-10SI AT17LV010A-10TQC AT17LV010A-10TQI AT17LV040 AT17LV040-10BJC AT17LV040-10BJI AT17LV040-10CC AT17LV040-10CI AT17LV040-10JC AT17LV040-10JI AT17LV040-10NC AT17LV040-10NI AT17LV040-10PC AT17LV040-10PI AT17LV040-10SC AT17LV040-10SI AT17LV040-10TQC AT17LV040-10TQI AT17LV040A-10BJC AT17LV040A-10BJI AT17LV040A-10CC AT17LV040A-10CI AT17LV040A-10JC AT17LV040A-10JI AT17LV040A-10NC AT17LV040A-10NI AT17LV040A-10P
OCR Text 524,288 x 1-, 1,048,576 x 1-, * * * * * * * * * * * 2,097,152 x 1-, and 4,194,304 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays (FPGAs) Supports both 3.3V and 5.0V Operating Voltage App...
Description 512K-bit FPGA Configuration EEPROM (5V and 3.3V).
65K-bit FPGA Configuration EEPROM (5V and 3.3V).
256K-bit FPGA Configuration EEPROM (5V and 3.3V).
1M-bit FPGA Configuration EEPROM (5V and 3.3V).
2M-bit FPGA Configuration EEPROM (5V and 3.3V)
FPGA Configuration EEPROM Memory

File Size 205.11K  /  24 Page

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    AT17LV010 AT17LV010-10JC AT17LV010-10JI AT17LV512- AT17LV512-10JC AT17C512 AT17C512-10JC AT17C512-10JI AT17C010 AT17C010

Atmel, Corp.
ATMEL[ATMEL Corporation]
Part No. AT17LV010 AT17LV010-10JC AT17LV010-10JI AT17LV512- AT17LV512-10JC AT17C512 AT17C512-10JC AT17C512-10JI AT17C010 AT17C010-10 AT17C010-10JC AT17C010-10JI AT17LV512 AT17LV512-10JI
OCR Text 524,288 x 1 and 1,048,576 x 1 bit Serial Memories Designed To Store Configuration Programs For Field Programmable Gate Arrays (FPGA) * Simple Interface to SRAM FPGAs * Compatible With Atmel AT6000, AT40K FPGAs, Altera EPF8K, EPF10K, * *...
Description FPGA Configuration E2PROM Memory FPGA配置E2PROM的记
FPGA Configuration E2PROM Memory 1M X 1 CONFIGURATION MEMORY, PQCC20

File Size 113.51K  /  9 Page

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    EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T70RSP EN29LV800T70RT EN29LV800T70RTI EN29LV800T70RTIP EN29LV80

Eon Silicon Solution Inc.
ETC
Part No. EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T70RSP EN29LV800T70RT EN29LV800T70RTI EN29LV800T70RTIP EN29LV800T70RTP EN29LV800B70RSP EN29LV800B70RTP EN29LV800B90S EN29LV800B90SP EN29LV800B90TI EN29LV800B90TP EN29LV800
OCR Text ...organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10s. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-perfor...
Description 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

File Size 237.36K  /  43 Page

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    HY57V161610DTC-6I

Hynix Semiconductor
Part No. HY57V161610DTC-6I
OCR Text ...1610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are intern...
Description 2 Banks x 512K x 16 Bit Synchronous DRAM

File Size 71.51K  /  11 Page

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    HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7 HY57V653220BTC-8
OCR Text ...3220B is organized as 4banks of 524,288x32. HY57V653220B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are...
Description 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86

File Size 152.09K  /  12 Page

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    IDT72T18105 IDT72T18105L10BB IDT72T18105L10BBI IDT72T18105L4BB IDT72T18105L4BBI IDT72T18105L5BB IDT72T18105L5BBI IDT72T1

IDT[Integrated Device Technology]
Part No. IDT72T18105 IDT72T18105L10BB IDT72T18105L10BBI IDT72T18105L4BB IDT72T18105L4BBI IDT72T18105L5BB IDT72T18105L5BBI IDT72T18105L6BB IDT72T18105L6BBI IDT72T18105L7BB IDT72T18105L7BBI IDT72T18115 IDT72T18115L10BB IDT72T18115L10BBI IDT72T18115L4BB IDT72T18115L4BBI IDT72T18115L5BB IDT72T18115L5BBI IDT72T18115L6BB IDT72T18115L6BBI IDT72T18115L7BB IDT72T18115L7BBI IDT72T18125 IDT72T18125L10BB IDT72T18125L10BBI IDT72T18125L4BB IDT72T18125L4BBI IDT72T18125L5BB IDT72T18125L5BBI IDT72T18125L6BB IDT72T18125L6BBI IDT72T18125L7BB IDT72T18125L7BBI IDT72T1855 IDT72T1855L10BB IDT72T1855L10BBI IDT72T1855L4BB IDT72T1855L4BBI IDT72T1855L5BB IDT72T1855L5BBI IDT72T1855L6BB IDT72T1855L6BBI IDT72T1855L7BB IDT72T1855L7BBI IDT72T1865 IDT72T1865L10BB IDT72T1865L10BBI IDT72T1865L4BB IDT72T1865L4BBI IDT72T1865L5BB IDT72T1865L5BBI IDT72T1865L6BB IDT72T1865L6BBI IDT72T1865L7BB IDT72T1865L7BBI IDT72T1875 IDT72T1875L10BB IDT72T1875L10BBI IDT72T1875L4BB IDT72T1875L4BBI IDT72T1875L5BB IDT72T1875L5BBI IDT72T1875L6BB IDT72T1875L6BBI IDT72T1875L7BB IDT72T1875L7BBI IDT72T1885 IDT72T1885L10BB IDT72T1885L10BBI IDT72T1885L4BB IDT72T1885L4BBI IDT72T1885L5BB IDT72T1885L5BBI IDT72T1885L6BB IDT72T1885L6BBI IDT72T1885L7BB IDT72T1
OCR Text ... x 18/262,144 x 9, 262,144 x 18/524,288 x 9, 524,288 x 18/1,048,576 x 9 IDT72T18125 FEATURES: * * * * * * * * * * * * * Choose among the following memory organizations: IDT72T1845 2,048 x 18/4,096 x 9 IDT72T1855 4,096 x 18/8,192...
Description 2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS

File Size 515.65K  /  55 Page

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    IXFT6N100F 6N100F IXFH6N100F

IXYS[IXYS Corporation]
Part No. IXFT6N100F 6N100F IXFH6N100F
OCR Text ... .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of...
Description Power MOSFETs

File Size 190.52K  /  4 Page

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    K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text ...te Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c...
Description 1M x 16 SDRAM

File Size 671.65K  /  42 Page

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    K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text ...te Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock ...
Description 16Mb H-die SDRAM Specification

File Size 106.31K  /  11 Page

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