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  59 u Datasheet PDF File

For 59 u Found Datasheets File :: 14491    Search Time::1.187ms    
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    APT5020BLC APT5020SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5020BLC APT5020SLC
OCR Text ...ads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensio...u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231...
Description POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.78K  /  2 Page

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BVFR
OCR Text ...e Drain Source 2.21 (.087) 2.59 (.102) 050-5527 Rev C 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.42K  /  4 Page

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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BVR
OCR Text ...e Drain Source 2.21 (.087) 2.59 (.102) 050-5512 Rev C 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.88K  /  4 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...ads are Plated 2.21 (.087) 2.59 (.102) 050-7131 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain G...u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...e Drain Source 2.21 (.087) 2.59 (.102) 050-5556 Rev C 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ...e Drain Source 2.21 (.087) 2.59 (.102) 050-5525 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ...e Drain Source 2.21 (.087) 2.59 (.102) 050-5615 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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    APT5032CVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5032CVR
OCR Text ...ackage Outline 13.84 (.545) 13.59 (.535) 1.27 (.050) 1.02 (.040) 6.91 (.272) 6.81 (.268) 3.78 (.149) Dia. 3.53 (.139) 20.32 (.800) 20...u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,47...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 14A 0.320 Ohm

File Size 60.85K  /  4 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...mitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6207 Dimensions in Millimeters and (Inches) Rev E ...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ...ce 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensio...u.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,47...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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