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意法半导
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| Part No. |
TS421-4 TS419-4 TS419-2
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| OCR Text |
...out gnd v cc v out1 1 2 3 4 8 7 6 5 ts421idt: so8 ts421ist, ts421-xist: miniso8 ts419iqt, ts419-xiqt: dfn8 ts421iqt, ts421-xiqt: dfn8 1 2 3 4 5 8 7 6 standby bypass v in+ vcc v out 1 gnd v in- v out 2 1 2 3 4 5 8 7 6 standby bypass v ... |
| Description |
360mW MONO AMPLIFIER WITH STANDBY MODE
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| File Size |
995.01K /
32 Page |
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it Online |
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ100SL-4
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| OCR Text |
...ues 7.4 Unit A
ID IDpuls
29.6
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
380 dv/dt 6
mJ
ID = 7.4 A, VDD = 25 V, RGS = 25 L = 13.8 mH, Tj = 25 C
Reverse diode dv/dt ... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
88.47K /
8 Page |
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it Online |
Download Datasheet |
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ101SL-4
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| OCR Text |
..., single pulse
EAS
90 dv/dt 6
mJ
ID = 4.1 A, VDD = 25 V, RGS = 25 L = 10.7 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
Gate source voltage Power dissipation ,one channel acti... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
BUZ103S-4
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| OCR Text |
... single pulse
EAS
140 dv/dt 6
mJ
ID = 5.3 A, VDD = 25 V, RGS = 25 L = 9.97 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 5.3 A,...4
V W
TA = 25 C
Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
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| File Size |
90.04K /
8 Page |
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it Online |
Download Datasheet |
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Analog Devices, Inc.
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| Part No. |
AD14160KB-4 AD14160LKB-4 AD14160LBB-4
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| OCR Text |
...ER SERIAL PORTS (2) LINK PORTS (6)
4 6 6 36
I/O PROCESSOR
Figure 1. ADSP-21060 Processor Block Diagram (Core of the AD14160/AD14160L)
-2-
REV. A
AD14160/AD14160L
0x0000 0000 0x0040 0000 BANK 0 DRAM (OPTIONAL)
INTERNAL... |
| Description |
Quad-SHARC DSP Multiprocessor Family
ECONOLINE: RD & RC - Dual Output from a Single Input Rail- 1kVDC & 2kVDC Isolation- Power Sharing on Output- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 86%
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| File Size |
1,205.01K /
52 Page |
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it Online |
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Advanced Analogic Technologies, Inc.
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| Part No. |
AAT3683IVN-4.2-4-T1 AAT3683IOQ-4.2-2-T1
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| OCR Text |
...input up to an input voltage of 6.5V. The AAT3683 precisely regulates battery charge voltage and current for 4.2V Li-Ion battery cells. The battery charging current can be set by an external resistor up to 1A. Digital Thermal Loop Control m... |
| Description |
1A Linear Li-Ion Battery Charger
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| File Size |
553.21K /
24 Page |
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it Online |
Download Datasheet |
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