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  6.40mm Datasheet PDF File

For 6.40mm Found Datasheets File :: 2325    Search Time::4.094ms    
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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253
OCR Text ...ed Diodes in one package 4 5 6 2 1 3 VPS05604 Type BAW 56S Marking Ordering Code A1s Q62702-A1253 Pin Configuration Pa...40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01...
Description Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system

File Size 42.19K  /  4 Page

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    BCR133 Q62702-C2256

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BCR133 Q62702-C2256
OCR Text ... 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA m...
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system

File Size 35.30K  /  4 Page

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    BCR133W Q62702-C2286 Q62702-C2255

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BCR133W Q62702-C2286 Q62702-C2255
OCR Text ... 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 2 10 1 mA m...
Description From old datasheet system
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

File Size 34.76K  /  4 Page

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    SPA04N60C2 SPB04N60C2 SPP04N60C2

INFINEON[Infineon Technologies AG]
Part No. SPA04N60C2 SPB04N60C2 SPP04N60C2
OCR Text ...5 2.8 4.51) 2.81) 9 130 0.4 4.5 6 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 162.81K  /  14 Page

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    SPD04N60C2 SPU04N60C2

INFINEON[Infineon Technologies AG]
Part No. SPD04N60C2 SPU04N60C2
OCR Text ...Ptot Tj , Tstg 9 130 0.4 4.5 6 20 50 -55... +150 A V/ns V W C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.5A, VDD =...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 142.50K  /  11 Page

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    SPN04N60C2

INFINEON[Infineon Technologies AG]
Part No. SPN04N60C2
OCR Text ...s dv/dt VGS Ptot Tj , Tstg 3 6 20 1.8 -55... +150 V/ns V W C Gate source voltage Power dissipation, TA = 25C Operating and storage tem...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 96.25K  /  10 Page

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    BCR133S Q62702-C2376 BCR133SQ62702C2376

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BCR133S Q62702-C2376 BCR133SQ62702C2376
OCR Text ...-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base volt...40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133S Electrical...
Description NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN硅数字晶体管阵列(开关电路,逆变器,接口电路,驱动电路)
TRANSISTOR DIGITAL SOT363
NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
From old datasheet system

File Size 43.87K  /  4 Page

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    SIEMENS AG
Part No. BAS20
OCR Text ...f ( t p ) t a = 25c ehb00032 -6 10 d = 0.005 0.01 0.02 t d = t bas 19...21 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p t p 0.05 0.1 0.2 t 10 10 -2 -1 a fm 10 10 10 0 1 2 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 1...
Description Silicon Switching Diodes(硅开关二极管,适合高速、高压开关应 硅开关二极管(硅开关二极管,适合高速,高压开关应用)

File Size 99.79K  /  4 Page

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    Infineon
Part No. SPD30N03
OCR Text .../s, t jmax = 175 ?c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 120 w operating and storage tem...40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection....
Description N-Channel SIPMOS Power Transistor

File Size 113.38K  /  8 Page

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    BCR198S Q62702-C2419

SIEMENS[Siemens Semiconductor Group]
Part No. BCR198S Q62702-C2419
OCR Text ...-C2419 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base volt...40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 198S Electrical...
Description From old datasheet system
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

File Size 43.94K  /  4 Page

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For 6.40mm Found Datasheets File :: 2325    Search Time::4.094ms    
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