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  60.120 Datasheet PDF File

For 60.120 Found Datasheets File :: 160220    Search Time::2.062ms    
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    2SB956 2SD1280 2SB0956

PANASONIC[Panasonic Semiconductor]
Part No. 2SB956 2SD1280 2SB0956
OCR Text ... s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Large collector power dissipation PC. Low collector to emitter saturati...120 140 160 0 0 -1 -2 -3 -4 -5 -6 -1 -3 -10 Ambient temperature Ta (C) Collector t...
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)

File Size 37.76K  /  2 Page

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    2SB967

PANASONIC[Panasonic Semiconductor]
Part No. 2SB967
OCR Text ...0.05 0.50.1 0.750.1 2.30.1 4.60.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter...120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 ...
Description Silicon PNP epitaxial planar type(For low-frequency power amplification)

File Size 42.64K  /  2 Page

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    2SB968 2SD1295

PANASONIC[Panasonic Semiconductor]
Part No. 2SB968 2SD1295
OCR Text ...0.05 0.50.1 0.750.1 2.30.1 4.60.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter...120 to 220 Rank hFE 1 Power Transistors PC -- Ta 32 -4.0 TC=Ta 28 -3.5 2SB968 IC -- V...
Description Silicon PNP epitaxial planar type(For low-frequency output amplification)

File Size 52.65K  /  3 Page

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    2SB970 2SB0970

PANASONIC[Panasonic Semiconductor]
Part No. 2SB970 2SB0970
OCR Text ...IE = 0, f = 1MHz -15 -10 -7 130 60 - 0.16 - 0.8 130 22 *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 max -100 0.16 -0.06 ...120 Collector current IC (A) - 0.8 - 0.6 80 - 0.4 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

File Size 36.21K  /  2 Page

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    2SB976

PANASONIC[Panasonic Semiconductor]
Part No. 2SB976
OCR Text ...A A V V -18 -7 125 - 0.4 120 60 *2 625 -1 V MHz pF Pulse measurement VCE(sat) *1h FE Rank classification Q 125 ~ 205 R 180 ~ 625 Rank hFE 1 Transistor PC -- Ta 1.0 -6 Ta=25C IB=-40mA -5 -35mA -30mA -25mA -4 -2...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 34.79K  /  2 Page

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    2SC1384 2SC1383

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC1384 2SC1383
OCR Text ...nd 2SA684. (Ta=25C) Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150 Unit V 2.540.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Colle...120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 1.5 Ta=25C 2SC1383, 2SC1384 ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 46.40K  /  3 Page

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    2SC2732

HITACHI[Hitachi Semiconductor]
Part No. 2SC2732
OCR Text ...30 700 -- -- Typ -- -- -- -- -- 60 1000 0.5 7.0 Max -- -- -- 0.5 5 -- -- 0.8 -- MHz pF dB Unit V V V A V Test conditions I C = 10 A, IE = 0 ...120 4 13 22 L2 : 1 mm Enameled Copper wire 90 20 90 13 90 90 3 7 L3 : 1 mm Enamele...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 35.50K  /  7 Page

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    2SC3931

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3931
OCR Text ... 20A 2 40 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) ...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

File Size 55.77K  /  3 Page

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    2SC4835

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4835
OCR Text ...Ta=75C 80 -25C 160 120 60 80 8 40 40 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter volt...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 36.52K  /  2 Page

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...VCEO VEBO IC PT Tj Tstg 20 12 3 60 100 125 -55 to +125 V V V mA mW C C Document No. P10383EJ2V0DS00 (2nd edition) (Previous No. TD-2428) ...120 GHz pF dB UNIT TEST CONDITION VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA VCE = 5 V...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

File Size 52.91K  /  8 Page

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For 60.120 Found Datasheets File :: 160220    Search Time::2.062ms    
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