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HITACHI[Hitachi Semiconductor]
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| Part No. |
MBN400GS12AW
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| OCR Text |
...V 200
200 9V
9V 0 0 2 4 6 8 10 0 0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter volt...7W TC=25C Resistive Load VCC=600V VGE=15V IC =400A TC=25C Resistive Load
TYPICAL
Switching Tim... |
| Description |
Silicon N-channel IGBT
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| File Size |
103.99K /
4 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
MBN400GR12BW
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| OCR Text |
...0
10V 200 9V 9V
0 0 2 4 6 8 10
0 0 2 4 6 8 10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter v...7W TC=25C Resistive Load
TYPICAL 10 VCC=600V VGE=15V IC =400A TC=25C Resistive Load
TYPICAL
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| Description |
Silicon N-channel IGBT
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| File Size |
104.17K /
4 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
M68731N 68731N
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| OCR Text |
...L EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 VDD=7.2V VGG=3.5V Pin=50mW T PO 100 90 80 70 60 50 40 30 20 10 0.1 0.5 1.0 1.5 2.0 f=142MHz VDD=7.2V Pin=50mW 2.5 3.0 1 3.5 1.0 10 PO 10.0 T OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 100... |
| Description |
From old datasheet system SILICON MOS FET POWER AMPLIFIER / 142-163MHz / 7W / FM PORTABLE RADIO RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
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| File Size |
21.29K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
M68731L 68731L
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| OCR Text |
...2V 12 VGG=3.5V Pin=50mW 11 10 9 8 7 6 5 4 3 2 1 0 130 140 90 PO 80 70 T 60 50 40 in 30 20 180 0.1 0.01 1 100 1 10 OUTPUT POWER, TOTAL EFFICE...7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 100 VDD=7.2V Pin=50mW f=155... |
| Description |
From old datasheet system SILICON MOS FET POWER AMPLIFIER / 135-155MHz / 7W / FM PORTABLE RADIO RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
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| File Size |
26.93K /
3 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M67799SHA
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| OCR Text |
...VGG=3.5V, Pin=20mW ZG=50, VDD=4.8-13.2V, Load VSWR<4:1 VDD=13.2V, Pin=20mW, PO=7W (VGG adjust), ZL=20:1
-25 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject t... |
| Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
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| File Size |
30.66K /
2 Page |
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