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83.33 Datasheet PDF File

For 83.33 Found Datasheets File :: 2974 Search Time::2.453ms
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				Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BCP53T1
OCR Text	...is to use the device at a PD of 833 mW using the footprint shown. Using a board material such as Thermal Clad, a power dissipation of 1.6 wa...3.8 0.079 2.0 interface between the board and the package. With the correct pad geometry, the pac...
Description	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
File Size	99.41K / 4 Page	View it Online	Download Datasheet

				Holtek Semiconductor Inc
Part No.	HT7039A HT7033A HT7044A HT7050A HT7022A HT7024A HT7027A HT7070A HT70XX
OCR Text	... Tower 2, Cheung Sha Wan Plaza, 833 Cheung Sha Wan Rd., Kowloon, Hong Kong Tel: 852-2-745-8288 Fax: 852-2-742-8657 Copyright O 2000 by HOLTE...3, 2000 ...
Description	Voltage Detector
File Size	126.95K / 11 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	MMBT2222AT MMBT2222AT-7
OCR Text	...TG MMBT2222AT 75 40 6.0 600 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous Power Dissipation...3 MMBT2222AT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector...
Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	55.25K / 3 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMBT2222AWT1 MMBT2222AWT1_D ON2110
OCR Text	...Symbol PD RqJA TJ, Tstg Max 150 833 - 55 to +150 Unit mW C/W C DEVICE MARKING MMBT2222AWT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25C ...3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO ...
Description	From old datasheet system Motorola Preferred Device General Purpose Transistor
File Size	68.98K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MUN5311DW MUN5311DW1T1 MUN5313DW1T1 MUN5312DW1T1 MUN53XXDW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1
OCR Text	...ckage Dissipation @ TA = 25C(1) 833 - 65 to +150 *150 DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES Device MUN5311DW1T1 MUN531...3 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 ...
Description	Dual Bias Resistor Transistors
File Size	306.01K / 16 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MUN5312DW1T1 MUN5313DW MUN5313DW1T1 MUN5314DW1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW MUN5331DW1T1 MUN5332DW MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5311DW1T1_D ON2727
OCR Text	...ckage Dissipation @ TA = 25C(1) 833 - 65 to +150 *150 DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES Device MUN5311DW1T1 MUN531...3 2.3 1.5 0.18 0.13 0.2 -- -- nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)...
Description	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network From old datasheet system
File Size	306.31K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM PDTC115ES PDTC115ET PDTC115EU
OCR Text	...series VALUE 250 500 500 625 833 500 500 UNIT K/W K/W K/W K/W K/W K/W K/W MIN. - - - - 80 - - 3 70 0.8 - TYP. - - - - - - 1.1 1.5 100 1 - MAX. 100 1 50 50 - 150 0.5 - 130 1.2 2.5 UNIT nA A A A mV V V k pF 2004 Aug 06...
Description	NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
File Size	84.83K / 14 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BCP69T1 ON0174
OCR Text	...is to use the device at a PD of 833 mW using the footprint shown. Using a board material such as Thermal Clad, a power dissipation of 1.6 wa...3.8 0.079 2.0 interface between the board and the package. With the correct pad geometry, the pac...
Description	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT From old datasheet system
File Size	69.93K / 4 Page	View it Online	Download Datasheet

				ELANTEC[Elantec Semiconductor]
Part No.	EL2002ACN EL2002C EL2002CM EL2002CN
OCR Text	...ufactured Under U S Patent No 4 833 424 and U K Patent No 2217134 Note All information contained in this data sheet has been carefully chec...3) g18V or 36V g15V or VS g50 mA TA TJ TST See Curves Continuous Operating Temperature Ran...
Description	Low Power 180 MHz Buffer Amplifier Low Power, 180 MHz Buffer Amplifier
File Size	287.65K / 12 Page	View it Online	Download Datasheet

For 83.33 Found Datasheets File :: 2974 Search Time::2.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |