90 120ns pdf Datasheet P15 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : E170A V674ME26 BTA20 CY7C026A 511816 PIC16C 11CX12 106M8R
	Product Description
	Full Text Search

90 120ns Datasheet PDF File

For 90 120ns Found Datasheets File :: 436 Search Time::2.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				SONY[Sony Corporation]
Part No.	LCX018 LCX018AK
OCR Text	... 49 4.5 59 -15 -15 0 0 35 80 45 90 Min. Typ. Max. 30 30 55 100 30 30 15 15 100 100 14.5 69 100 100 20 20 100 100 2250 6050 20 20 -950 2550 n...120ns Hck1 fall to Hck2 rise time 50% 50% 50% 50% * tdHst = 60ns thHst = -120ns ...
Description	1.8cm (0.7-inch) NTSC/PAL/WID Color LCD Panel
File Size	348.12K / 22 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Hanbit Electronics Co.,Ltd ETC[ETC] List of Unclassifed Manufacturers
Part No.	HMF8M16F8V HMF8M16F8V-90
OCR Text	90 FLASH-ROM MODULE 16MByte (8M x 16-Bit) - Memory Stack Type Part No. HMF8M16F8V- 90 GENERAL DESCRIPTION The HMF8M16F8V is a high-spee...120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3V to 3.6V power...
Description	FLASH-ROM MODULE 16MByte (8M x 16-Bit) Memory Stack Type 闪光- ROM模块16MByte米16位）内存堆栈 FLASH-ROM MODULE 16MByte (8M x 16-Bit) - Memory Stack Type FLASH-ROM MODULE 16MByte (8M x 16-Bit) Memory Stack Type
File Size	407.31K / 13 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
Part No.	29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002B-70 29F002B-55 29F002B-12 29F002T-70 MX29F002TQC-70G MX29F002TQC-90G MX29F002BPI-70G MX29F002TPI-70G
OCR Text	90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V 10% Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2...
Description	2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
File Size	626.84K / 51 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX26L1620XBI-90 MX26L1620 MX26L1620MC-12 MX26L1620MC-90 MX26L1620MI-12 MX26L1620MI-90 MX26L1620TC-12 MX26L1620TC-90 MX26L1620TI-12 MX26L1620TI-90 MX26L1620XAC-12 MX26L1620XAC-90 MX26L1620XAI-12 MX26L1620XAI-90 MX26L1620XBC-12 MX26L1620XBC-90 MX26L1620XBI-12
OCR Text	...Performance - Fast access time: 90/120ns (typ.) - Fast program time: 35s/chip (typ.) - Fast erase time: 45s/chip (typ.) Low Power Consumption - Low active read current: 10mA (typ.) at 5MHz - Low standby current: 30uA (typ.) Minimum 100 eras...
Description	16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
File Size	681.36K / 36 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd.
Part No.	27L1000-25
OCR Text	...ng voltage ? fast access time:90/120/150/200/250 ns ? totally static operation ? completely ttl compatible pin configurations 32 pdip/...120ns 6.2k ohm 1.8k ohm +5v cl 2.0v 0.8v test points input 2.0v 0.8v output ac testing: ac driving l...
Description	1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 100万位[128Kx8]低电压工作的CMOS存储
File Size	962.74K / 15 Page	View it Online	Download Datasheet

				Noritake Co., Inc.
Part No.	PUMA68F16006X-12 PUMA68F16006X-90
OCR Text	... features ? access times of 70, 90 and 120ns. ? 5v + 10%. ? commercial and industrial temperature grades ? jedec standard 68 plcc footprint. ? industry standard pinout. ? may be organised as 512kx32, 1mx16 or 2mx8 ? user configurable as 8...
Description	45NS, VSOP, IND TEMP(FLASH) 45NS, PLCC, IND TEMP(FLASH) EEPROM
File Size	125.76K / 5 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	M5M29GB640C3BTI-12 M5M29GB640C3BXAC-90 M5M29GB640C3BTC-12 M5M29GB640C3BTC-90 M5M29GB640C3BTI-90 M5M29GB640C3BXAC-12 M5M29GB640C3TXAC-12 M5M29GB640C3TXAC-90 M5M29GB640C3TTI-12 M5M29GB640C3BXAI-12 M5M29GB640C3TTC-12 M5M29GB640C3TTC-90 M5M29GB640C3TTI-90 M5M29GB640C3BXAI-90 M5M29GB640C3TXAI-90 M5M29GB640C3TXAI-12 M5M29GB640VP
OCR Text	...-40 C~85 C * Fast access time : 90/120ns * Low power consumption - 9mA maximum active read current, f=5MHz (CMOS input) - 21mA program erase current maximum (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode * Sector arch...
Description	3.3V ONLY FLASHMEMORY
File Size	613.86K / 42 Page	View it Online	Download Datasheet

				FORCE TECHNOLOGIES LTD
Part No.	TS256S8N-12B
OCR Text	...ddress valid to end of write 80 90 105 115 ns 12 t cw chip enable to end of write 80 90 105 115 ns 13 t dw data to write time overlap 35 35 40 50 ns 14 t dh data hold time from write time 0 0 0 0 ns 15 t wp write pulse width 55 65 75 85 ns ...
Description	256K X 8 STANDARD SRAM, 120 ns, CDIP32
File Size	279.43K / 7 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd.
Part No.	29F040-90 29F040-55 29F040-70 MX29F040PI-70 MX29F040QI-70 MX29F040QI-70G MX29F040TI-70 MX29F040TI-90 MX29F040TI-90G MX29F040PC-55G MX29F040PI-70G MX29F040TC-70G
OCR Text	...ation fast access time: 55/70/90/120ns low power consumption - 30ma maximum active current(5mhz) - 1ua typical standby current command register architecture - byte programming (7us typical) - sector erase 8 equal sectors of 64k-byte e...
Description	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 4分位[512KX8]的CMOS平等部门闪存 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
File Size	605.75K / 40 Page	View it Online	Download Datasheet

For 90 120ns Found Datasheets File :: 436 Search Time::2.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |