|
|
 |

Cree, Inc
|
Part No. |
CGH27015F CGH27015F-TB CGH27015F-AMP
|
OCR Text |
crees cgh27015 is a gallium nitride (gan) high electron mobility transistor designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh27015 ideal for vhf, comms, 3g, 4g, lte, 2.3-2.9ghz wimax a... |
Description |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
File Size |
1,446.83K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |

Cree, Inc
|
Part No. |
CGH27030F-AMP CGH27030F-TB
|
OCR Text |
crees cgh27030 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh27030 ideal for vhf, comms, 3g, 4g, lte, 2.3-2.9ghz... |
Description |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
File Size |
995.78K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Cree, Inc.
|
Part No. |
CGH35030F
|
OCR Text |
crees cgh35030f is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh35030f ideal for 3.3- 3.9ghz wimax and bwa... |
Description |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
File Size |
658.46K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|