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  d-100a Datasheet PDF File

For d-100a Found Datasheets File :: 24564    Search Time::2.718ms    
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    HFA80NC40CSM

International Rectifier
Part No. HFA80NC40CSM
OCR Text ...ve avalanche energy ? 1.4 mj p d @ t c = 25c maximum power dissipation 150 p d @ t c = 100c maximum power dissipation 59 t j operating ...100a v fm max forward voltage CCC 1.1 1.3 i f = 40a CCC 1.3 1.5 v i f = 80a CCC 1.0 1.2 i f = 40a...
Description 400V 80A HEXFRED Common Cathode Diode in a D61-8-SM package

File Size 187.67K  /  5 Page

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    AO4609

Alpha & Omega Semiconductors
Part No. AO4609
OCR Text ...-30 gate-source voltage 20 12 i d 8.5 drain-source voltage 30 -3 a t a =70c 6.6 -2.4 pulsed drain current b 40 -6 continuous drain current...100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 399.97K  /  12 Page

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    AO4603

Alpha & Omega Semiconductors
Part No. AO4603
OCR Text ...0c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current a t a =25c i d t a =70c p...100a/ s gate resistance turn-off delaytime turn-off fall time body diode reverse recovery time diod...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 164.25K  /  7 Page

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    AO4601 AO4601L

Alpha & Omega Semiconductors
Part No. AO4601 AO4601L
OCR Text ... lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. Thes...100A/s 7 25.2 12 32 26 19 25 18 -2.5 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m m S V A pF pF...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 300.13K  /  7 Page

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    AO6603 AO6603L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AO6603 AO6603L
OCR Text ...A VGS=4.5V, V DS=5V VGS=4.5V, I D=1.7A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, I D=1A VGS=1.8V, I D=0.7A gFS VSD IS Forw...100A/s IF=1A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 16 4 8.1 125 225 315 290 425 0.55 Min 20 1 5 25 0.8 Ty...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 274.03K  /  7 Page

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    Motorola
Part No. MRF6404D
OCR Text ...c = 25 c derate above 25 c p d 125 0.71 watts w/ c storage temperature range t stg C65 to +150 c operating junction temperature t j 200...100a c5, c9 330 pf, chip capacitor, vitramon (0805 a331 jxb) c7, c11 4.7 f, 63 v, electrolytic cap...
Description MRF6404 30 W, 1.88 GHz RF Power Transistor - Archived

File Size 427.69K  /  10 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ... switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area...100A 0s 10V 11V 12V 13V 14V 15V 0A 10V 12V 14V 16V 18V 20V VG...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    BUK452-100B BUK452-100A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK452-100B BUK452-100A
OCR Text ...N CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ...100A 11 7.7 44 60 175 175 MAX. 100 100 30 -100B 10 7 40 UNIT V V V A A A W C C THERMAL RESISTANCE...
Description PowerMOS transistor 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 51.94K  /  7 Page

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    IKW75N60T

Infineon Technologies AG
Part No. IKW75N60T
OCR Text ...current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 7 5 A, d i F / d t =1 4 60 A / s td(on) tr td(off) tf Eon Eof...100A IC, COLLECTOR CURRENT 150A T C =80C 100A T C =110C IC, COLLECTOR CURRENT 50s 10A ...
Description Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 408.05K  /  13 Page

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