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Diodes Incorporated
Diodes Inc.
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| Part No. |
DMP3100L DMP3100L-7
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| OCR Text |
DMP3100L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
* Low On-Resistance: 100m @ VGS = -10V, ID = -2.7A 170m @ VGS = -4.5V, ID = -2.0A L...250A VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ... |
| Description |
P-CHANNEL ENHANCEMENT MODE MOSFET
2.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
113.65K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRF7389 IRF7389TR
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| OCR Text |
...-4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D... |
| Description |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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| File Size |
210.72K /
10 Page |
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Diodes Incorporated
Diodes Inc.
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| Part No. |
DMC2004DWK DMC2004DWK-7 DMC2004DWK-15
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| OCR Text |
DMC2004DWK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* * * * * * * * * * Low On-Resistance Low Gate Threshol...250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = ... |
| Description |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
540 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
287.01K /
8 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFL014N
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| OCR Text |
...tching Fully Avalanche Rated
D
G S
ID = 1.9A
Description
Fifth Generation HEXFET(R) MOSFETs from International Rectifier utiliz...250A --- V/C Reference to 25C, ID = 1mA 0.16 VGS = 10V, ID = 1.9A 4.0 V VDS = VGS, ID = 250A --- S... |
| Description |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
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| File Size |
140.28K /
8 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF20N40
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| OCR Text |
d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 0.25 100% uis tested 100% r g tested for halogen free add "l" suffix to part numb...250a, vgs=0v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
340.58K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF12T50P
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| OCR Text |
...es for industrial, consumer, an d telecom g d s to-220f aotf12t50p g d s symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol...250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 a output capacitance f... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
411.08K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF4N60
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| OCR Text |
d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 2.2 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt...250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
359.99K /
6 Page |
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it Online |
Download Datasheet |
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