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IRF[International Rectifier]
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Part No. |
20CTH03S 20CTH03FP 20CTH03-1 20CTH03
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OCR Text |
... = 300V) None = TO-220AC S "-1" FP = D2Pak = TO-262 Option = TO-220 FULLPACK
8
www.irf.com
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A 08/03
Data and specifications subject to change without notice. This pro... |
Description |
Hyperfast Rectifier 300V 20A HyperFast Discrete Diode in a TO-262 package 300V 20A HyperFast Discrete Diode in a TO-220 FullPack package 300V 20A HyperFast Discrete Diode in a D2-Pak package
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File Size |
213.70K /
9 Page |
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it Online |
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ST Microelectronics
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Part No. |
STW7NK90Z STB6NK90ZT4 STP6NK90ZFP
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OCR Text |
fp/d 2 pak/to-247 zener-protected supermesh?power mosfet n typical r ds (on) = 1.56 w n extremely high dv/dt capability n 100% avalanche tes...100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 2.9 a 1.56 2 w symbol p... |
Description |
N-CHANNEL 900V - 1.56W - 5.8A TO-220/FP/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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File Size |
678.65K /
13 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB11NM60T4
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OCR Text |
fp/d 2 pak/i 2 pak mdmesh?power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/s, v dd <v (br)dss ,t j <t jm...100a/s, v dd =100v,t j =25 c (see test circuit, figure 5) 390 3.8 19.5 ns c a t rr q rr i rrm rever... |
Description |
N-Channel 600V - 0.4Ohm - 11A TO-220 MDmesh POWER MOSFET
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File Size |
338.94K /
12 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STB20NM50 STB20NM50-1
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OCR Text |
fp-d2pak-i2pak zener-protected supermesh? mosfet general features high dv/dt and avalanche capabilities 100% avalanche tested low inpu...100a/s, v dd =100 v, tj=25 c 350 4.6 26 ns c a t rr q rr i rrm reverse recovery time reverse recov... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
435.25K /
16 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STP9NK60ZFP
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OCR Text |
fp/d 2 pak/i 2 pak zener-protected supermesh?power mosfet n typical r ds (on) = 0.85 w n extremely high dv/dt capability n improved esd cap...100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.85 0.95 w ... |
Description |
N-CHANNEL Power MOSFET
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File Size |
677.73K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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