| |
|
 |
RFMD[RF Micro Devices]
|
| Part No. |
RF2381PCBA RF2381
|
| OCR Text |
...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package.
1.80 1.40 .50 .35 3.10 2.70 .10 MAX.
4
GENERAL PURPOSE AMPLIFIERS
TEX... |
| Description |
PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER
|
| File Size |
101.11K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
HITTITE[Hittite Microwave Corporation]
|
| Part No. |
HMC508LP5 HMC508LP5E
|
| OCR Text |
...LP5 & HMC508LP5E are GaAs InGaP heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC508LP5 & HMC508LP5E integrate resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO's phase noise perf... |
| Description |
MMIC VCO w/ HALF FREQUENCY OUTPUT 7.3 - 8.2 GHz
|
| File Size |
347.43K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
hitachi
|
| Part No. |
HE8812SG
|
| OCR Text |
heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
* High efficiency, high output
Absolute Maximum Ratings (TC = 25... |
| Description |
GaAlAs Infrared Emitting Diodes
From old datasheet system
|
| File Size |
18.10K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
N.A.
OPNEXT[Opnext. Inc.]
|
| Part No. |
HE8404SG
|
| OCR Text |
heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
* High efficiency and high output power
Package Type * HE8404SG: S... |
| Description |
GaAlAs Infrared Emitting Diode
|
| File Size |
182.97K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
RFMD[RF Micro Devices]
|
| Part No. |
RF2103PPCBA RF2103P
|
| OCR Text |
...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver ... |
| Description |
MEDIUM POWER LINEAR AMPLIFIER
|
| File Size |
190.80K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| Part No. |
RF2311PCBA RF2311
|
| OCR Text |
...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication prod... |
| Description |
GENERAL PURPOSE AMPLIFIER
|
| File Size |
60.94K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
