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  high breakdown voltage vceo 30 Datasheet PDF File

For high breakdown voltage vceo 30 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    2SC3646T-TD-E 2SC3646S-TD-E

ON Semiconductor
Part No. 2SC3646T-TD-E 2SC3646S-TD-E
Description Bipolar Transistor high breakdown voltage and large current capacity

File Size 361.56K  /  7 Page

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    SMBTA06UPN SMBTA06UPN07

Infineon Technologies AG
Part No. SMBTA06UPN SMBTA06UPN07
Description NPN / PNP Silicon AF Transistor Array high breakdown voltage

File Size 75.26K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. 2SB1181
Description hight breakdown voltage and high current. Low VCE(sat).

File Size 60.67K  /  1 Page

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    HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB3164400AT-50 HYB3164400AT-40 HYB3165400ATL-40 HYB3165400AT-40 HYB31644

Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
Part No. HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB3164400AT-50 HYB3164400AT-40 HYB3165400ATL-40 HYB3165400AT-40 HYB3164400ATL-40 HYB3165400AJ-60
Description 16M x 4-Bit Dynamic RAM
high-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
high-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter voltage, vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E breakdown voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32

File Size 252.48K  /  26 Page

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    2SC5128

Panasonic Semiconductor
Part No. 2SC5128
Description µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package
Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching

File Size 57.94K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4615
Description Large current calcity (IC=1A) high blocking voltage(vceo 400V)

File Size 205.01K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4616
Description Large current calcity (IC=2A) high blocking voltage(vceo 400V)

File Size 222.86K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC2712
Description high voltage and high current: vceo = 50 V, IC = 150 mA (max) high hFE: hFE = 70 700

File Size 249.46K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4548
Description high breakdown voltage Adoption of MBIT Process Excellent hFE Linearlity.

File Size 446.97K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4134
Description high breakdown voltage and large current capacity. Fast switching speed.

File Size 115.35K  /  2 Page

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For high breakdown voltage vceo 30 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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