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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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it Online |
Download Datasheet
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Matsushita Electric Works(Nais)
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| Part No. |
AQV221 AQV221A AQV221AZ AQV225A AQV225AZ AQV225AX AQV221AX
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| Description |
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 40 V, load current 80 mA. Throuh hole terminal. Tube packing style.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 40 V, load current 80 mA. Surface-mount terminal. Tube packing style.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 40 V, load current 80 mA. Surface-mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 80 V, load current 50 mA. Surface-mount terminal. Tube packing style.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 80 V, load current 50 mA. Surface-mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 80 V, load current 50 mA. Surface-mount terminal. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 80 V, load current 50 mA. Throuh hole terminal. Tube packing style.
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. AC/DC type. Output rating: load voltage 40 V, load current 80 mA. Surface-mount terminal. Tape and reel packing style, picked from the 1/2/3-pin side.
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| File Size |
45.21K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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